Semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsMasato Ishino, Yoichi Sasai
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate having a plurality of mesa stripes whose widths are different from each other. Quantum well layers are formed on the mesa stripes respectively and have different band gap energies. The quantum well layers include ultra-thin epitaxial layers respectively. Semiconductor elements are formed on the mesa stripes respectively and include the quantum well layers respectively. Thicknesses of the ultra-thin layers are preferably equal to or less than 500 angstroms.
Claims13
A semiconductor device comprising:
- a semiconductor substrate having a plurality of mesa stripes whose widths are different from each other;
- quantum well layers formed on the mesa stripes respectively and having different band gap energies, the quantum well layers including ultra-thin epitaxial layers respectively;
- and
- semiconductor elements formed on the mesa stripes respectively and including the quantum well layers respectively.
In a semiconductor laser device comprising:
- a semiconductor substrate;
- a light source formed on the substrate and having an active layer, laser electrodes for drive current injection, and grating, the active layer and the grating constituting a laser resonant cavity and emitting light having a wavelength determined by the grating and the cavity;
- an optical waveguide formed on the substrate and having a waveguide layer guiding the light from the light source;
- the improvement wherein the active layer and the waveguide layer comprise a quantum well layer, and wherein a thickness of a portion of the quantum well layer which extends in the light source is greater than a thickness of a portion of the quantum well layer which extends in the optical waveguide.
In a semiconductor laser device comprising:
- a semiconductor substrate;
- a light source formed on the substrate and having an active layer and laser electrodes for drive current injection, the light source emitting light;
- an optical waveguide formed on the substrate and guiding the light from the light source, the optical waveguide having a waveguide layer and a grating;
- wherein the active layer, the waveguide layer, and the grating constitute a laser resonant cavity and cooperate to emit light having a wavelength determined by the grating and the cavity;
- the improvement wherein the active layer and the waveguide layer comprise a quantum well layer, and wherein a thickness of a portion of the quantum well layer which extends in the light source is greater than a thickness of a portion of the quantum well layer which extends in the optical waveguide.
A semiconductor device comprising:
- a semiconductor substrate having different areas;
- quantum well layers formed on the areas and each including a laminated structure of a well layer and a barrier layer;
- wherein a thickness of the well layer is different for each of the areas, and the quantum well layers having respective band gap energies which are different for the respective areas due to quantum size effects;
- and
- semiconductor device elements formed on the areas respectively and including the quantum well layers respectively.
Dependencies are inferred from the claim text.