H01S 2304/04
Mocvd or movpe
H01S2304/04 (Mocvd or movpe) appears on 639 US grants and 657 published applications in this corpus.
Search patents in H01S- Granted patents
- 639
- Published applications
- 657
- Assignees
- 185
- Inventors
- 1,089
- Latest grant
- 29 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1988 | 1 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 2 | 0 |
| 1992 | 2 | 0 |
| 1993 | 3 | 0 |
| 1994 | 8 | 0 |
| 1995 | 6 | 0 |
| 1996 | 12 | 0 |
| 1997 | 7 | 0 |
| 1998 | 20 | 0 |
| 1999 | 11 | 0 |
| 2000 | 9 | 0 |
| 2001 | 15 | 10 |
| 2002 | 11 | 16 |
| 2003 | 19 | 21 |
| 2004 | 24 | 24 |
| 2005 | 20 | 47 |
| 2006 | 18 | 29 |
| 2007 | 19 | 37 |
| 2008 | 23 | 43 |
| 2009 | 32 | 42 |
| 2010 | 39 | 43 |
| 2011 | 34 | 33 |
| 2012 | 35 | 37 |
| 2013 | 22 | 21 |
| 2014 | 27 | 12 |
| 2015 | 23 | 14 |
| 2016 | 14 | 18 |
| 2017 | 18 | 14 |
| 2018 | 19 | 30 |
| 2019 | 26 | 33 |
| 2020 | 27 | 26 |
| 2021 | 19 | 28 |
| 2022 | 18 | 19 |
| 2023 | 13 | 20 |
| 2024 | 17 | 16 |
| 2025 | 12 | 15 |
| 2026 | 12 | 9 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- External-cavity-free low-threshold perovskite laser device and application thereof29 Sep 2026US 12,749,874 B2Zhejiang University
- Stacked gratings for optical emitters21 Jul 2026US 12,689,183 B2Lumentum Operations LLC
- Opto-electronic device16 Jun 2026US 12,658,677 B2Nokia Solutions and Networks Oy
- Semiconductor laser element, semiconductor laser device, semiconductor laser device manufacturing method, and gas analysis device26 May 2026US 12,640,538 B2Horiba, Ltd.
- Large area synthesis of cubic phase gallium nitride on silicon21 Apr 2026US 12,610,762 B2The Board of Trustees of the University of Illinois
- Zero thickness planarization of overgrown semiconductor structures17 Sep 2026US 2026/0280230 A1
- Surface-emitting laser and surface-emitting laser array6 Aug 2026US 2026/0229847 A1Sony Group Corporation
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Semiconductor light emitting element2 Jul 2026US 2026/0188981 A1Nichia Corporation
- Relaxed wurtzite ingan layers4 Jun 2026US 2026/0155632 A1Opnovix Corp.
Most cited
By later US patents
- Method and surface morphology of non-polar gallium nitride containing substrates269US 8,247,887 B1Soraa, Inc. · 2012
- Blue vertical cavity surface emitting laser248US 6,160,833 AXerox Corporation · 2000
- Integrated total internal reflectors for high-gain laser diodes with high quality cleaved facets on nonpolar/semipolar GaN substrates234US 8,259,769 B1Soraa, Inc. · 2012
- Self-aligned multi-dielectric-layer lift off process for laser diode stripes231US 8,143,148 B1Soraa, Inc. · 2012
- Gallium nitride group compound semiconductor laser diode190US 5,247,533 AToyoda Gosei Co., Ltd. · 1993