H01S 2304/12
Pendeo epitaxial lateral overgrowth [elog]
Official title: Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
H01S2304/12 (Pendeo epitaxial lateral overgrowth [elog]) appears on 307 US grants and 364 published applications in this corpus.
Search patents in H01S- Granted patents
- 307
- Published applications
- 364
- Assignees
- 124
- Inventors
- 523
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 1 | 0 |
| 1995 | 0 | 0 |
| 1996 | 2 | 0 |
| 1997 | 1 | 0 |
| 1998 | 3 | 0 |
| 1999 | 1 | 0 |
| 2000 | 4 | 0 |
| 2001 | 11 | 11 |
| 2002 | 13 | 22 |
| 2003 | 15 | 22 |
| 2004 | 21 | 26 |
| 2005 | 24 | 38 |
| 2006 | 17 | 17 |
| 2007 | 14 | 28 |
| 2008 | 20 | 29 |
| 2009 | 18 | 20 |
| 2010 | 29 | 15 |
| 2011 | 17 | 13 |
| 2012 | 15 | 13 |
| 2013 | 13 | 11 |
| 2014 | 8 | 3 |
| 2015 | 6 | 6 |
| 2016 | 9 | 2 |
| 2017 | 2 | 4 |
| 2018 | 4 | 4 |
| 2019 | 4 | 3 |
| 2020 | 7 | 9 |
| 2021 | 5 | 6 |
| 2022 | 4 | 17 |
| 2023 | 2 | 11 |
| 2024 | 6 | 14 |
| 2025 | 8 | 12 |
| 2026 | 3 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Large area synthesis of cubic phase gallium nitride on silicon21 Apr 2026US 12,610,762 B2The Board of Trustees of the University of Illinois
- Relaxed Wurtzite Ingan layers3 Feb 2026US 12,542,413 B2Opnovix Corp.
- Laser diode20 Jan 2026US 12,531,395 B2Asahi Kasei Kabushiki Kaisha
- Method for producing a radiation-emitting semiconductor chip, and radiation-emitting semiconductor chip4 Nov 2025US 12,463,186 B2ams-OSRAM International GmbH
- Method for flattening a surface on an epitaxial lateral growth layer16 Sep 2025US 12,417,913 B2The Regents of the University of California
- Surface emitting laser, method for fabricating surface emitting laser20 Aug 2026US 2026/0246239 A1Sanoh Industrial Co., Ltd.
- Ultraviolet laser diode on a nano-porous aluminum gallium nitride template6 Aug 2026US 2026/0229837 A1The Regents of the University of California
- Relaxed wurtzite ingan layers6 Aug 2026US 2026/0229852 A1Opnovix Corp.
- Semiconductor light emitting element2 Jul 2026US 2026/0188981 A1Nichia Corporation
- Relaxed wurtzite ingan layers4 Jun 2026US 2026/0155632 A1Opnovix Corp.
Most cited
By later US patents
- Method of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor device643US 6,153,010 ANichia Chemical Industries, Ltd. · 2000
- Nitride semiconductor element and production method for nitride semiconductor element498US 6,818,465 B2Sony Corporation · 2004
- Nitride based semiconductor device489US 7,084,420 B2Samsung Electro-Mechanics Co., Ltd. · 2006
- Semiconductor light emitting device and semiconductor laser289US 6,680,959 B2Rohm Co., Ltd. · 2004
- Nitride semiconductor device with improved lifetime and high output power273US 6,586,762 B2Nichia Corporation · 2003