Method for producing a radiation-emitting semiconductor chip, and radiation-emitting semiconductor chip

A radiation-emitting semiconductor chip comprising:

• a semiconductor layer sequence comprising an active area designed to generate electromagnetic radiation,
• a first recess in the semiconductor layer sequence, which completely penetrates the active area, and
• a first structure, which is arranged in the first recess, and
• a first dielectric mirror, which is arranged over the first structure, wherein
• at least one lateral surface of the first structure facing toward the active area extends obliquely to at least one first lateral surface of the semiconductor layer sequence,
• the first structure is spaced apart in lateral directions from the active area,
• the first dielectric mirror extends along a main extension plane of the semiconductor chip,
• the first dielectric mirror is made partially reflective for the electromagnetic radiation, and
• the lateral directions are aligned in parallel to the main extension plane of the semiconductor chip.

A method for producing a radiation-emitting semiconductor chip comprising:

• providing a semiconductor layer sequence comprising an active area, which is designed to generate electromagnetic radiation,
• creating a first recess in the semiconductor layer sequence, which completely penetrates the active area,
• creating a first structure in the first recess, and
• applying a first dielectric mirror over the first structure, wherein
• at least one lateral surface of the first structure facing toward the active area extends obliquely to at least one first lateral surface of the semiconductor layer sequence,
• the first structure is spaced apart in lateral directions from the active area,
• the first dielectric mirror extends along a main extension plane of the semiconductor chip, and
• the first dielectric mirror is made partially reflective for the electromagnetic radiation, wherein
• a dielectric layer is applied to the lateral surface of the first structure, wherein an index of refraction of the dielectric layer is less than an index of refraction of the semiconductor layer sequence and/or wherein
• a filler material is applied between the first structure and the semiconductor layer sequence, and an index of refraction of the filler material deviates by not more than n=0.2 from an index of refraction of the semiconductor layer sequence.