H01J 2237/3326
High speed
Official title: high speed
H01J2237/3326 (High speed) appears on 9 US grants and 19 published applications in this corpus.
Search patents in H01J- Granted patents
- 9
- Published applications
- 19
- Assignees
- 15
- Inventors
- 33
- Latest grant
- 10 Sep 2019
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 1 |
| 2005 | 0 | 2 |
| 2006 | 0 | 0 |
| 2007 | 2 | 0 |
| 2008 | 0 | 0 |
| 2009 | 0 | 2 |
| 2010 | 0 | 1 |
| 2011 | 1 | 0 |
| 2012 | 1 | 1 |
| 2013 | 0 | 2 |
| 2014 | 0 | 1 |
| 2015 | 0 | 1 |
| 2016 | 1 | 5 |
| 2017 | 0 | 1 |
| 2018 | 0 | 0 |
| 2019 | 3 | 0 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 0 | 1 |
| 2024 | 0 | 0 |
| 2025 | 0 | 0 |
| 2026 | 0 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Ways to generate plasma in continuous power mode for low pressure plasma processes10 Sep 2019US 10,410,833 B2Europlasma NV
- Radical generator and molecular beam epitaxy apparatus4 Jun 2019US 10,312,054 B2National University Corporation Nagoya University
- Plasma-chemical coating apparatus22 Jan 2019US 10,186,401 B2W & L Coating Systems GmbH
- Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films21 Jun 2016US 9,371,579 B2Lam Research Corporation
- Plasma deposition of amorphous semiconductors at microwave frequencies25 Sep 2012US 8,273,641 B2Ovshinsky Innovation LLC
- Beam Plasma Source Enhanced Magnetron Sputtering29 Jan 2026US 2026/0031312 A1Board of Trustees of Michigan State University
- Atmospheric plasma processing method and atmospheric plasma processing apparatus10 Aug 2023US 2023/0253194 A1FUJIFILM Corporation
- Dodecadon transfer chamber and processing system having the same7 Dec 2017US 2017/0352562 A1
- Improved Ways to Generate Plasma in Continuous Power Mode for Low Pressure Plasma Processes29 Sep 2016US 2016/0284518 A1Europlasma NV
- Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films22 Sep 2016US 2016/0276140 A1Lam Research Corporation
Most cited
By later US patents
- Plasma CVD apparatus including rotating magnetic field generation means57US 5,423,915 AMitsubishi Jukogyo Kagushiki Kaisha · 1995
- Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films29US 9,371,579 B2Lam Research Corporation · 2016
- Method and apparatus for production of metal film or the like3US 7,208,421 B2Mitsubishi Heavy Industries, Ltd. · 2007
- Interconnection structure2US 7,262,500 B2Phyzchemix Corporation · 2007
- Method and apparatus for production of metal film or the like1US 7,923,374 B2Canon Anelva Corporation · 2011