Method and apparatus for production of metal film or the like

A metal film production method which comprises:

• independently disposing an etched member, formed from a metal forming a high vapor pressure halide, at a position opposed to a substrate in a chamber accommodating the substrate in an interior thereof;
• etching the etched member with a source gas plasma containing a halogen within the chamber to form a precursor comprising a metallic component and the halogen;
• and
• controlling temperatures of the etched member and the substrate so as to effect a temperature of the substrate lower than a temperature of the etched member and so as to provide a temperature difference at least equal to or more than 100 degrees C. between the temperature of the substrate and the temperature of the etched member, thereby adsorbing the precursor onto the substrate,
• said metal film production method further comprising:
• controlling plasma conditions of another halogen generated by a reaction between the each precursor adsorbed onto the substrate in order to dissociate the other halogen so as to increase a dissociation rate of the other halogen, and
• replenishing the dissociated other halogen around a vicinity of the substrate to extract a halogen from the precursor, thereby depositing the metallic component on the substrate for performing the predetermined film formation.

A metal film production method comprising:

• independently disposing an etched member, formed from a composite metal comprising a plurality of metallic components forming high vapor pressure halides, at a position opposed to a substrate in a chamber accommodating the substrate in an interior thereof;
• etching the etched member with a source gas plasma containing a halogen within the chamber to form a plurality of precursors comprising the metallic components and the halogen;
• and
• controlling temperatures of the etched member and the substrate so as to effect a temperature of the substrate lower than a temperature of the etched member and so as to provide a temperature difference between the temperature of the substrate and the temperature of the etched member at least equal to or more than 100 degrees C., thereby depositing the metallic components of the plurality of precursors on the substrate to perform predetermined film formation.

A metal film production method comprising:

• independently disposing an etched member, formed from a composite metal comprising one or more metallic components and one or more nonmetallic components forming high vapor pressure halides, at a position opposed to a substrate in a chamber accommodating the substrate in an interior thereof;
• etching the etched member with a source gas plasma containing a halogen within the chamber to form one or more precursors comprising the metallic components and the halogen and one or more precursors comprising the nonmetallic components and the halogen;
• and
• controlling temperatures of the etched member and the substrate so as to effect a temperature of the substrate lower than a temperature of the etched member and so as to provide a temperature difference between the temperature of the substrate and the temperature of the etched member at least equal to or more than 100 degrees C., thereby depositing the metallic components and the nonmetallic components simultaneously on the substrate to perform predetermined film formation.