Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films

An apparatus comprising:

• a processing chamber, wherein the processing chamber includes a pedestal for supporting a substrate, wherein an interior of the processing chamber includes a chemical vapor deposition zone adjacent to the pedestal and a relaxation zone above the chemical vapor deposition zone;
• a plasma chamber that is separate from the processing chamber, wherein the plasma chamber is configured to generate excited hydrogen radicals;
• a gas distributor fluidly coupled with the processing chamber and the plasma chamber, wherein the gas distributor includes a plurality of through-holes configured to direct a flow of excited hydrogen radicals into the relaxation zone of the processing chamber, the plurality of through-holes configured to cause substantially all of the excited hydrogen radicals flowing into and through the relaxation zone to transition into relaxed hydrogen radicals;
• and
• one or more reactant openings positioned below the relaxation zone, the one or more reactant openings configured to direct a flow of an organosilicon reactant into the chemical vapor deposition zone of the processing chamber.