H01J 2237/24542
Beam profile
H01J2237/24542 (Beam profile) appears on 133 US grants and 148 published applications in this corpus.
Search patents in H01J- Granted patents
- 133
- Published applications
- 148
- Assignees
- 59
- Inventors
- 293
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 1 | 1 |
| 2004 | 3 | 1 |
| 2005 | 1 | 2 |
| 2006 | 1 | 4 |
| 2007 | 4 | 6 |
| 2008 | 12 | 14 |
| 2009 | 5 | 12 |
| 2010 | 12 | 10 |
| 2011 | 8 | 5 |
| 2012 | 9 | 10 |
| 2013 | 9 | 9 |
| 2014 | 11 | 7 |
| 2015 | 10 | 7 |
| 2016 | 6 | 5 |
| 2017 | 4 | 3 |
| 2018 | 4 | 3 |
| 2019 | 4 | 6 |
| 2020 | 8 | 8 |
| 2021 | 5 | 6 |
| 2022 | 3 | 3 |
| 2023 | 2 | 4 |
| 2024 | 3 | 4 |
| 2025 | 5 | 11 |
| 2026 | 2 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- In-situ ion beam angle measurement21 Apr 2026US 12,609,279 B2APPLIED Materials.Inc.
- FIB and SEM resolution enhancement using asymmetric probe deconvolution7 Apr 2026US 12,597,583 B2FEI Company
- Fast beam calibration procedure for beamline ion implanter25 Nov 2025US 12,482,709 B2APPLIED Materials.Inc.
- Method for ion implantation uniformity control22 Jul 2025US 12,368,018 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Particle beam column15 Jul 2025US 12,362,129 B2Carl Zeiss Microscopy GmbH
- Multipole magnet adjustment system and multipole magnet adjustment method13 Aug 2026US 2026/0237591 A1Kabushiki Kaisha Toshiba
- A new design concept of scanning electron microscope with charged particle source30 Jul 2026US 2026/0221383 A1ASML Netherlands B. V.
- Ion implanter and method of ion beam control using ion beam imaging system16 Jul 2026US 2026/0204513 A1APPLIED Materials.Inc.
- Ion implanter28 May 2026US 2026/0148925 A1Advanced Ion Beam Technology, Inc.
- Scanned beam dose rate measurement for ion beam optimization28 May 2026US 2026/0148932 A1APPLIED Materials.Inc.
Most cited
By later US patents
- Charged particle beam detection system32US 6,847,036 B1University of Washington · 2005
- Method and apparatus for determining beam parallelism and direction28US 6,791,094 B1Varian Semiconductor Equipment Associates, Inc. · 2004
- Technique and apparatus for monitoring ion mass, energy, and angle in processing systems26US 8,698,107 B2Varian Semiconductor Equipment Associates, Inc. · 2014
- Technique for high-efficiency ion implantation22US 7,176,470 B1Varian Semiconductor Equipment Associates, Inc. · 2007
- Ion implantation apparatus21US 5,132,545 AMitsubishi Denki Kabushiki Kaisha · 1992