Method for ion implantation uniformity control

A method for ion beam uniformity tuning, the method comprising:

• generating an ion beam in an ion implantation system;
• acquiring a data set representative of a two-dimensional (2D) profile of the ion beam;
• generating a plurality of first one-dimensional (1D) profiles of the ion beam from the data set;
• generating a plurality of second 1D profiles of the ion beam from the plurality of first 1D profiles of the ion beam;
• superposing current density values of the plurality of second 1D profiles of the ion beam to generate a combined 1D profile of the ion beam;
• calculating an average 1D profile of the ion beam by dividing current density values of the combined 1D profile by a quantity of second 1D profiles in the plurality of second 1D profiles of the ion beam;
• and
• determining whether to continue an implantation process with the ion beam in accordance with the average 1D profile of the ion beam.

A method comprising:

• moving an ion beam profiler along a translation path with respect to an ion beam such that the ion beam profiler covers an entire cross-sectional area of the ion beam;
• acquiring a data set representative of a two-dimensional (2D) profile of the ion beam using a plurality of sensors on the ion beam profiler, the plurality of sensors being spaced out in a linear fashion in a direction that is perpendicular to the translation path;
• generating a first one-dimensional (1D) profile of the ion beam from the data set, wherein generating the first 1D profile of the ion beam comprises:
• generating a plurality of second 1D profiles of the ion beam from the data set representative of the 2D profile of the ion beam, wherein the data set is acquired from a region of the ion beam profiler that extends from −50 mm to +50 mm on either side of a vertical center line of the ion beam profiler, each of the plurality of second 1D profiles having a first set of current density values:
• generating a plurality of third 1D profiles of the ion beam from the plurality of second 1D profiles, each of the plurality of third 1D profiles having a second set of current density values;
• and
• superposing the first current density values of each of the plurality of second 1D profiles with the second current density values of a corresponding one of the plurality of third 1D profiles to generate a plurality of fourth 1D profiles of the ion beam;
• and
• comparing the first 1D profile of the ion beam to an optimal beam profile, wherein the optimal beam profile comprises an average of a plurality of fifth 1D profiles.