In-situ ion beam angle measurement
AssigneeApplied Materials, Inc.
InventorsDaniel Distaso, Thomas Soldi, Joseph C. Olson
Life of this patent
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Abstract
A processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. The angle measurement system includes a current measurement device, such as one or more Faraday sensors, that may be moved in at least two orthogonal directions. The current measurement device scans in a first direction, seeking the largest current measurement. The current measurement device then moves to a second position in the second direction and repeats the scanning procedure. Based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.
Claims18
A processing system, comprising:
- an ion source to create an ion beam having a width and a height;
- a current measurement device wherein the ion beam is directed toward the current measurement device and impacts the current measurement device at an angle different from a perpendicular angle;
- a scanning motor to move the current measurement device in a direction that is orthogonal to the width of the ion beam, referred to as a scanning direction, wherein a position of the current measurement device in the scanning direction is referred to as a scanning position;
- a Z direction motor to move the current measurement device in a direction that is orthogonal to a surface of the current measurement device;
- and
- a controller configured to:
- move the current measurement device to a first position in a Z direction (Z1) using the Z direction motor;
- determine a first scanning position (Y1) that results in a greatest detected current while the current measurement device is located at the first position in the Z direction (Z1);
- move the current measurement device to a second position in the Z direction (Z2) using the Z direction motor;
- determine a second scanning position (Y2) that results in a greatest detected current while the current measurement device is located at the second position in the Z direction (Z2);
- and
- use Y1, Y2, Z1 and Z2 to determine an angle of incidence of the ion beam.
A method of determining an angle of incidence of an ion beam, comprising:
- determining a first scanning position (Y1) where a current detected by a current measurement device is a maximum while the current measurement device is at a first Z position (Z1);
- determining a second scanning position (Y2) where a current detected by the current measurement device is a maximum while the current measurement device is at a second Z position (Z2);
- and
- using Y1, Y2, Z1 and Z2 to determine the angle of incidence of the ion beam.
Dependencies are inferred from the claim text.