Ion implanter
AssigneeAdvanced Ion Beam Technology, Inc.
InventorYu-Teng Lai
Life of this patent
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Abstract
An ion implanter includes an ion source, a linear multipole module, an ion beam shape adjustment module, and an analyzer magnet unit. The linear multipole module is positioned between the ion source and a substrate. The ion beam shape adjustment module is positioned between the ion source and the linear multipole module. The analyzer magnet unit is positioned between the ion source and the linear multipole module, the ion beam shape adjustment module is positioned in front of an entrance of the analyzer magnet unit, and the linear multipole module is positioned behind an exit of the analyzer magnet unit. The ion beam shape adjustment module is configured to adjust an ion beam to modify an ion beam divergence angle as the ion beam enters the substrate.
Claims11
An ion implanter, configured to process a substrate, comprising:
- an ion source, configured to generate an ion beam;
- a linear multipole module positioned between the ion source and the substrate, and configured to diverge the ion beam;
- an ion beam shape adjustment module, positioned between the ion source and the linear multipole module;
- and
- an analyzer magnet unit, positioned between the ion source and the linear multipole module, the ion beam shape adjustment module being positioned in front of an entrance of the analyzer magnet unit, and the linear multipole module being positioned behind an exit of the analyzer magnet unit, wherein
- the ion beam shape adjustment module is configured to adjust the ion beam to modify an ion beam divergence angle as the ion beam enters the substrate.
Dependencies are inferred from the claim text.