G11C 2213/12
Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by
Official title: Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by the electrode or another layer during a write operation, e.g. trapping, doping
G11C2213/12 (Non-metal ion trapping, i.e. using memory material trapping non-metal ions given by) appears on 25 US grants and 28 published applications in this corpus.
Search patents in G11C- Granted patents
- 25
- Published applications
- 28
- Assignees
- 16
- Inventors
- 59
- Latest grant
- 15 Aug 2023
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2003 | 0 | 2 |
| 2004 | 1 | 2 |
| 2005 | 3 | 1 |
| 2006 | 0 | 2 |
| 2007 | 0 | 1 |
| 2008 | 0 | 0 |
| 2009 | 1 | 1 |
| 2010 | 2 | 2 |
| 2011 | 1 | 3 |
| 2012 | 1 | 4 |
| 2013 | 5 | 3 |
| 2014 | 4 | 3 |
| 2015 | 3 | 0 |
| 2016 | 1 | 1 |
| 2017 | 0 | 1 |
| 2018 | 1 | 1 |
| 2019 | 0 | 0 |
| 2020 | 1 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 1 |
| 2023 | 1 | 0 |
By publication year.
Recent patents
- Magnetic device with gate electrode15 Aug 2023US 11,730,065 B2Korea Advanced Institute of Science and Technology
- Memory cell switch device19 May 2020US 10,658,588 B2Sony Corporation
- Resistive memory devices2 Oct 2018US 10,090,462 B2Micron Technology, Inc.
- Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell1 Mar 2016US 9,275,728 B2Micron Technology, Inc.
- Resistive memory devices29 Dec 2015US 9,224,945 B2Micron Technology, Inc.
- Magnetic device with gate electrode12 May 2022US 2022/0149268 A1Korea Advanced Institute of Science and Technology
- Memory cell switch device11 Oct 2018US 2018/0294408 A1Sony Corporation
- Proton resistive memory devices and methods16 Feb 2017US 2017/0047513 A1University of Washington
- Resistive memory devices24 Mar 2016US 2016/0086664 A1Micron Technology, Inc.
- Resistive Random Access Memory Cells Having Variable Switching Characteristics10 Jul 2014US 2014/0192586 A1Intermolecular, Inc.
Most cited
By later US patents
- Memory device134US 6,768,157 B2Advanced Micro Devices, Inc. · 2004
- Memory device with active and passive layers115US 6,858,481 B2Advanced Micro Devices, Inc. · 2005
- Memory device with active passive layers103US 6,838,720 B2Advanced Micro Devices, Inc. · 2005
- Organic bistable device and organic memory cells61US 6,950,331 B2The Regents of the University of California · 2005
- Data read/write device12US 7,733,684 B2Kabushiki Kaisha Toshiba · 2010