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US 2018/0294408 A1Published application
Memory cell switch device
AssigneeSony Corporation
InventorsShuichiro Yasuda, Tomohito Tsushima
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Abstract
Memory structures with a plurality of memory cells that each include memory devices in combination with switch devices are provided. The memory device and switch device of each cell are connected in series, and include at least first and second electrodes. The first electrode features a relatively high resistance, to provide a reduced snap current during operation of the memory device. The first electrode with a relatively high resistance can contain or be entirely composed of TiAlN.
Claims24
A switch device, comprising:
- a first electrode, wherein the first electrode contains titanium;
- a second electrode;
- a switch layer, wherein the switch layer is between the first electrode and the second electrode.
A storage unit, comprising:
- a plurality of memory cells, wherein each memory cell in the plurality of memory cells includes:
- a switch device, including:
- a first electrode, wherein the first electrode includes titanium aluminum nitride (TiAlN);
- a second electrode;
- and
- a switch layer, wherein the switch layer is between the first electrode and the second electrode;
- a storage device, including:
- a storage layer;
- a third electrode, wherein the storage layer is between the second electrode and the third electrode.
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A method for producing an electrode of a memory cell, comprising:
- depositing a layer of TiN on a substrate;
- depositing a layer of AlN on the substrate;
- repeating the steps of depositing a layer of TiN and of depositing a layer of Al multiple times;
- after repeating the steps of depositing a layer of TiN and of depositing a layer of Al multiple times, performing NH3 annealing of the deposited layers.
1 more element
Dependencies are inferred from the claim text.