Magnetic device with gate electrode
AssigneeKorea Advanced Institute of Science and Technology
InventorsByong Guk PARK, Min-Gu KANG, Jong-Guk CHOI
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Abstract
Provided is a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer. The first electrode and the first gate electrode are arranged in the second direction.
Claims15
A magnetic device comprising:
- a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction;
- a free layer disposed on the conductive layer;
- a fixed layer disposed on a portion of the free layer;
- a tunnel barrier layer disposed between the free layer and the fixed layer;
- a first electrode disposed on the fixed layer;
- a first charge storage layer disposed on the free layer so as not to overlap the fixed layer;
- and
- a first gate electrode disposed on the first charge storage layer,
- wherein the first electrode and the first gate electrode are arranged in the second direction.
A method for operating a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, and a first gate electrode disposed on the first charge storage layer, wherein the first electrode and the first gate electrode are arranged in the second direction, the method comprising:
- applying a first program gate voltage to the first gate electrode to accumulate charges in or move the charges to the first charge storage layer, thereby programming the first charge storage layer to a first polarity;
- applying an in-plane current to the conductive layer to switch a magnetization direction of the free layer;
- and
- applying a read voltage to the first electrode to read tunnel resistance of a magnetic tunnel junction by the free layer/tunnel barrier layer/fixed layer.
A method for operating a magnetic device including a conductive layer extended in a first direction and providing a spin Hall effect on a placement plane defined by the first direction and a second direction, a free layer disposed on the conductive layer, a fixed layer disposed on a portion of the free layer, a tunnel barrier layer disposed between the free layer and the fixed layer, a first electrode disposed on the fixed layer, a first charge storage layer disposed on the free layer so as not to overlap the fixed layer, a first gate electrode disposed on the first charge storage layer, a second charge storage layer disposed on the free layer so as not to overlap the fixed layer and the first charge storage layer;
- and a second gate electrode disposed on the second charge storage layer, wherein the first gate electrode, the first electrode, and the second gate electrode are sequentially arranged in the second direction, the method comprising:
- applying a first program gate voltage to the first gate electrode to accumulate charges in or move the charges to the first charge storage layer, thereby programming the first charge storage layer to a first polarity;
- applying an in-plane current to the conductive layer to switch the magnetization direction of the free layer;
- and
- applying a read voltage to the first electrode to read tunnel resistance of a magnetic tunnel junction by the free layer/tunnel barrier layer/fixed layer.
Dependencies are inferred from the claim text.