Resistive memory devices
AssigneeMicron Technology, Inc.
InventorsDurai Vishak Nirmal Ramaswamy, Lei Bi, Beth R. Cook, Dale W. Collins
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Abstract
Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.
Claims14
A method comprising:
- forming a resistive memory cell including:
- forming a first electrode;
- forming a dielectric structured as an operably variable resistance region on the first electrode:
- forming a metallic barrier in a region between the dielectric and a second electrode, the metallic barrier formed with a structure and a material composition providing oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell, the first threshold greater than the second threshold, the structure and material composition selected to maintain a metallic state or a semiconducting state during cell operation to provide oxygen movement to allow a low resistance to the resistive memory cell;
- and
- forming the second electrode.
A method comprising:
- forming a resistive memory cell including:
- forming a first electrode;
- forming a dielectric on the first electrode, the dielectric formed of a material and structured as an operably variable resistance region;
- forming a metallic barrier on the dielectric, the metallic barrier formed having a structure and a material composition providing oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell, the first threshold greater than the second threshold;
- forming an oxide on the metallic barrier adjacent a second electrode;
- and
- forming the second electrode.
The method of claim of 6, wherein forming the dielectric includes forming one or more of hafnium oxide, zirconium oxide, zirconium silicon oxide, zirconium silicon oxynitride, hafnium silicon oxide, hafnium silicon oxynitride, aluminum oxide, aluminum silicon oxide, aluminum silicon oxynitride, or combinations of these materials and forming the oxide includes forming one or more of praseodymium calcium manganese oxide, lanthanum strontium cobalt oxide, or lanthanum strontium manganese oxide.
The method of claim of 6, wherein forming one or both of the first electrode and the second electrode includes forming one or more noble metals.
A method comprising:
- operating a resistive memory cell, the resistive memory cell including:
- two electrodes;
- a dielectric structured as an operably variable resistance region between the two electrodes;
- and
- a metallic barrier disposed in a region between the dielectric and one of the two electrodes, the metallic barrier having a structure and a material composition providing oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell, the first threshold greater than the second threshold;
- applying a signal across the two electrodes to place the resistive memory cell in a high resistive state or a low resistive state with no electric field across the metallic barrier.
Dependencies are inferred from the claim text.