Memory cells, non-volatile memory arrays, methods of operating memory cells, methods of writing to and writing from a memory cell, and methods of programming a memory cell

A method of programming a memory cell comprising a pair of opposing conductive electrodes having resistance switchable material received there-between, comprising:

• applying an electric field through the resistance switchable material in a prevailingly laterally oriented direction to cause mobile dopants within the resistance switchable material to move laterally toward or away from one of opposing lateral edges of the resistance switchable material to change resistance between the pair of electrodes, no external voltage being applied to the pair of opposing conductive electrodes during said applying.

A method of writing to a cross point memory cell of an array of cross point memory cells comprising a plurality of word lines and a plurality of bit lines crossing the plurality of word lines, individual of the cross point memory cells comprising a different one of the crossings of the plurality of word lines and the plurality of bit lines relative to one another, the method comprising:

• writing to a memory cell by applying a differential write voltage between the two immediately adjacent bit lines which are on opposing lateral sides of said memory cell, the individual memory cells comprising resistance switchable material received between the crossing word lines and bit lines, the writing comprising switching the resistance of the resistance switchable material between at least two different resistance states.

A memory cell comprising:

• first and second opposing electrodes having resistance switchable material received there-between, the resistance switchable material being capable of being programmed to at least two different resistance states, the resistance switchable material in a lowest resistance state comprising a conductive channel localized along only one of two laterally opposing edges of the resistance switchable material and extending toward and away from the first and second electrodes, the resistance switchable material having a minimum elevational thickness that is at least twice as great as its minimum lateral width.