Resistive memory devices
AssigneeMicron Technology, Inc.
InventorsDurai Vishak Nirmal Ramaswamy, Lei Bi, Beth R. Cook, Dale W. Collins
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Abstract
Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.
Claims13
An apparatus comprising:
- a resistive memory cell including:
- two electrodes;
- a dielectric structured as an operably variable resistance region between the two electrodes, the dielectric disposed on one of the two electrodes;
- and
- a plurality of structural pairs disposed between the dielectric and the other one of the two electrodes, each structural pair having an oxide disposed on a metallic barrier, each metallic barrier having metallic conductivity properties, the structural pairs stacked on each other between the dielectric and the other one of the two electrodes, each metallic barrier having a structure and a material composition providing oxygen diffusivity above a first threshold of oxygen diffusivity during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold of oxygen diffusivity during a retention state of the resistive memory cell, the first threshold greater than the second threshold, program and erase operations including an electric field applied between the two electrodes that is high with respect to an electric field applied between the two electrodes during a retention state.
An apparatus comprising:
- a resistive memory cell including:
- a first electrode and a second electrode;
- a dielectric disposed on the first electrode, the dielectric structured as an operably variable resistance region;
- a plurality of structural pairs disposed between the dielectric and the second electrode, each structural pair having an oxide disposed on a metallic barrier, each metallic barrier having metallic conductivity properties, the structural pairs stacked on each other between the dielectric and the second electrode, each metallic barrier having a structure and a material composition providing oxygen diffusivity above a first threshold of oxygen diffusivity during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold of oxygen diffusivity during a retention state of the resistive memory cell, the first threshold greater than the second threshold, program and erase operations including an electric field applied between the first and second electrodes that is high with respect to an electric field applied between the first and second electrodes during a retention state;
- and
- an oxide of the plurality of structural pairs disposed adjacent and contacting the second electrode.
Dependencies are inferred from the claim text.