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US 10,658,588 B2Granted
Memory cell switch device
AssigneeSony Corporation
InventorsShuichiro Yasuda, Tomohito Tsushima
Life of this patent
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Abstract
Memory structures with a plurality of memory cells that each include memory devices in combination with switch devices are provided. The memory device and switch device of each cell are connected in series, and include at least first and second electrodes. The first electrode features a relatively high resistance, to provide a reduced snap current during operation of the memory device. The first electrode with a relatively high resistance can contain or be entirely composed of TiAlN.
Claims12
A method for producing a first electrode of a memory cell, comprising:
- depositing a layer of TiN on a substrate;
- depositing a layer of AlN on the substrate;
- repeating the steps of depositing a layer of TiN and of depositing a layer of AlN multiple times;
- and
- after repeating the steps of depositing a layer of TiN and of depositing a layer of AlN multiple times, performing NH3 annealing of the deposited layers,
- wherein the first electrode includes titanium aluminum nitride (TiAlN).
3 more elements
Dependencies are inferred from the claim text.