Resistive memory devices
AssigneeMicron Technology, Inc.
InventorsDurai Vishak Nirmal Ramaswamy, Lei Bi, Beth R. Cook, Dale W. Collins
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Abstract
Electronic apparatus, systems, and methods can include a resistive memory cell having a structured as an operably variable resistance region between two electrodes and a metallic barrier disposed in a region between the dielectric and one of the two electrodes. The metallic barrier can have a structure and a material composition to provide oxygen diffusivity above a first threshold during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold during a retention state of the resistive memory cell. Additional apparatus, systems, and methods are disclosed.
Claims15
A method comprising:
- forming a resistive memory cell including:
- forming a first electrode;
- forming a dielectric structured as an operably variable resistance region on the first electrode;
- forming a plurality of structural pairs disposed on the dielectric, each structural pair having an oxide disposed on a metallic barrier such that the oxide and the metallic barrier are in direct contact with each other, each metallic barrier having metallic conductivity properties, the structural pairs stacked on each other on the dielectric, each metallic barrier formed with a structure and a material composition providing oxygen diffusivity above a first threshold of oxygen diffusivity during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold of oxygen diffusivity during a retention state of the resistive memory cell, the first threshold greater than the second threshold, the structure and material composition selected to maintain a metallic state or a semiconducting state during cell operation to provide oxygen movement to allow a low resistance to the resistive memory cell;
- and
- forming a second electrode such that the plurality of structural pairs is disposed between the dielectric and the second electrode.
A method comprising:
- forming a resistive memory cell including:
- forming a first electrode;
- forming a dielectric disposed on the first electrode, the dielectric formed of a material and structured as an operably variable resistance region;
- forming a plurality of structural pairs disposed on the dielectric, each structural pair having an oxide disposed on a metallic barrier such that the oxide and the metallic barrier are in direct contact with each other, each metallic barrier having metallic conductivity properties, the structural pairs stacked on each other, each metallic barrier formed having a structure and a material composition providing oxygen diffusivity above a first threshold of oxygen diffusivity during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold of oxygen diffusivity during a retention state of the resistive memory cell, the first threshold greater than the second threshold;
- and
- forming a second electrode adjacent and contacting an oxide of the plurality of structural pairs such that the plurality of structural pairs is disposed between the dielectric and the second electrode with the structural pairs stacked on each other between the dielectric and the second electrode.
The method of claim of 7, wherein forming the dielectric includes forming one or more of hafnium oxide, zirconium oxide, zirconium silicon oxide, zirconium silicon oxynitride, hafnium silicon oxide, hafnium silicon oxynitride, aluminum oxide, aluminum silicon oxide, aluminum silicon oxynitride, or combinations of these materials and forming the oxide includes forming one or more of praseodymium calcium manganese oxide, lanthanum strontium cobalt oxide, or lanthanum strontium manganese oxide.
The method of aim of 7, wherein forming one or both of the first electrode and he second electrode includes forming one or more noble metals.
A method comprising:
- operating a resistive memory cell, the resistive memory cell including:
- two electrodes:
- a dielectric structured as an operably variable resistance region between the two electrodes, the dielectric disposed on one of the two electrodes;
- and
- a plurality of structural pairs disposed between the dielectric and the other one of the two electrodes, each metallic barrier having metallic conductivity properties, each structural pair having an oxide disposed on a metallic barrier such that the oxide and the metallic barrier are in direct contact with each other, the structural pairs stacked on each other between the dielectric and the other one of the two electrodes, each metallic barrier having a structure and a material composition providing oxygen diffusivity above a first threshold of oxygen diffusivity during program or erase operations of the resistive memory cell and oxygen diffusivity below a second threshold of oxygen diffusivity during a retention state of the resistive memory cell, the first threshold greater than the second threshold, program and erase operations including an electric field applied between the two electrodes that is high with respect to an electric field applied between the two electrodes during a retention state;
- and
- applying a signal across the two electrodes to place:
- the resistive memory cell in a high resistive state or a low resistive state with no electric field across the metallic barriers.
Dependencies are inferred from the claim text.