G11C 2207/12
Equalization of bit lines
G11C2207/12 (Equalization of bit lines) appears on 47 US grants and 49 published applications in this corpus.
Search patents in G11C- Granted patents
- 47
- Published applications
- 49
- Assignees
- 35
- Inventors
- 114
- Latest grant
- 24 Mar 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 2000 | 5 | 0 |
| 2001 | 0 | 0 |
| 2002 | 1 | 0 |
| 2003 | 1 | 2 |
| 2004 | 1 | 3 |
| 2005 | 1 | 0 |
| 2006 | 1 | 0 |
| 2007 | 0 | 1 |
| 2008 | 1 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 0 |
| 2011 | 0 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 0 | 2 |
| 2016 | 2 | 2 |
| 2017 | 4 | 3 |
| 2018 | 4 | 3 |
| 2019 | 2 | 3 |
| 2020 | 2 | 1 |
| 2021 | 3 | 1 |
| 2022 | 2 | 8 |
| 2023 | 4 | 6 |
| 2024 | 5 | 5 |
| 2025 | 7 | 7 |
| 2026 | 1 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Data transmission/receiving circuit, data training circuit and semiconductor apparatus including the same24 Mar 2026US 12,586,614 B2SK hynix Inc.
- Discharge circuits for a NAND flash memory23 Dec 2025US 12,505,887 B2Yangtze Memory Technologies Co., Ltd.
- Signal generator for controlling timing of signal in memory device11 Nov 2025US 12,469,531 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Precharge circuitry for memory29 Jul 2025US 12,374,374 B2Xenergic AB
- Drive circuit with improved timing margin for memory device24 Jun 2025US 12,340,838 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Bit line charge sharing for sram dynamic power savings5 Mar 2026US 2026/0065979 A1QUALCOMM Incorporated
- Drive circuit with improved timing margin for memory device25 Sep 2025US 2025/0299729 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Bit Line Pre-Charge Circuit for Power Management Modes in Multi Bank SRAM14 Aug 2025US 2025/0259675 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Memory device with reset voltage control3 Jul 2025US 2025/0218477 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Sense amplifier circuit and semiconductor memory device including the same26 Jun 2025US 2025/0210096 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- High-speed static random access memory14US 6,075,729 AHitachi, Ltd. · 2000
- Integrated circuit memory devices having improved precharge and I/O driver characteristics and methods of operating same13US 6,026,035 ASamsung Electronics Co., Ltd. · 2000
- Semiconductor memory device having a precharge device12US 6,049,493 AFujitsu Limited · 2000
- Read assist circuitry11US 9,824,749 B1Arm Limited · 2017
- Technique for reducing peak current in memory operation10US 6,075,733 ALSI Logic Corporation · 2000