Memory device with reset voltage control

A memory device, comprising:

• a memory cell;
• a bit line coupled to the memory cell;
• and
• a controller configured to:
• set a voltage of a bit line to a first voltage level or a second voltage level according to a mode of the memory device during a reset phase, and
• set the voltage of the bit line to a third voltage level above the first and second voltage levels during a precharge phase.

A method comprising:

• operating, by a controller during a reset phase, at least one first transistor to set a voltage of a bit line to a first voltage level or a second voltage level according to a mode of a memory device;
• operating, by the controller during a precharge phase after the reset phase, at least one second transistor to set the voltage of the bit line to a third voltage level;
• and
• operating, by the controller during a sensing phase after the precharge phase, a word line to discharge the bit line according to data stored by a memory cell of the memory device,
• wherein the data stored by the memory cell is determined according to the voltage of the bit line discharged during the sensing phase.