G11C 2207/002
Isolation gates, i.e. gates coupling bit lines to the sense amplifier
G11C2207/002 (Isolation gates, i.e. gates coupling bit lines to the sense amplifier) appears on 845 US grants and 806 published applications in this corpus.
Search patents in G11C- Granted patents
- 845
- Published applications
- 806
- Assignees
- 181
- Inventors
- 1,133
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1994 | 2 | 0 |
| 1995 | 0 | 0 |
| 1996 | 5 | 0 |
| 1997 | 5 | 0 |
| 1998 | 5 | 0 |
| 1999 | 4 | 0 |
| 2000 | 5 | 0 |
| 2001 | 9 | 6 |
| 2002 | 22 | 20 |
| 2003 | 24 | 30 |
| 2004 | 36 | 44 |
| 2005 | 28 | 43 |
| 2006 | 47 | 46 |
| 2007 | 42 | 39 |
| 2008 | 27 | 37 |
| 2009 | 35 | 32 |
| 2010 | 34 | 37 |
| 2011 | 33 | 43 |
| 2012 | 36 | 21 |
| 2013 | 24 | 23 |
| 2014 | 25 | 14 |
| 2015 | 21 | 22 |
| 2016 | 28 | 22 |
| 2017 | 36 | 27 |
| 2018 | 33 | 35 |
| 2019 | 40 | 41 |
| 2020 | 55 | 49 |
| 2021 | 43 | 48 |
| 2022 | 40 | 43 |
| 2023 | 34 | 31 |
| 2024 | 36 | 26 |
| 2025 | 23 | 19 |
| 2026 | 8 | 8 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Integrated memory comprising secondary access devices between digit lines and primary access devices25 Aug 2026US 12,720,721 B2Micron Technology, Inc.
- Apparatuses and methods for single and multi memory cell architectures14 Jul 2026US 12,682,945 B2Micron Technology, Inc.
- Sensing circuit in a vertical memory system16 Jun 2026US 12,658,255 B2Micron Technology, Inc.
- Data storage circuit and control method thereof, and storage apparatus5 May 2026US 12,620,422 B2Changxin Memory Technologies, Inc.
- DRAM device with multiple voltage domains10 Mar 2026US 12,573,448 B2Rambus Inc.
- Memory device13 Aug 2026US 2026/0237415 A1Kioxia Corporation
- Systems and methods for increasing sense margin of memory sensing amplifiers30 Jul 2026US 2026/0221181 A1Samsung Electronics Co., Ltd.
- Memory device including bitline sense amplifier circuit23 Jul 2026US 2026/0212914 A1Samsung Electronics Co., Ltd.
- Data storage circuit and control method thereof, and storage apparatus9 Jul 2026US 2026/0196255 A1Changxin Memory Technologies, Inc.
- Sense Amplifier Circuitry and Threshold Voltage Compensation7 May 2026US 2026/0128082 A1Micron Technology, Inc.
Most cited
By later US patents
- Semiconductor memory device allowing high-speed operation of internal data buses455US 6,172,918 B2Mitsubishi Denki Kabushiki Kaisha · 2001
- DRAM having bidirectional global bit lines453US 5,367,488 AGoldstar Electron Co., Ltd. · 1994
- Dynamic memory with isolated digit lines445US 5,506,811 AMicron Technology, Inc. · 1996
- Fast, low power, write scheme for memory circuits using pulsed off isolation device423US 6,122,211 AMicron Technology, Inc. · 2000
- Semiconductor memory device adopting improved local input/output line precharging scheme421US 8,223,568 B2Samsung Electronics Co., Ltd. · 2012