G11C 16/345
Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure
Official title: {Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure verification}
G11C16/345 (Circuits or methods to detect overerased nonvolatile memory cells, usually during erasure) appears on 107 US grants and 88 published applications in this corpus.
Search patents in G11C- Granted patents
- 107
- Published applications
- 88
- Assignees
- 44
- Inventors
- 150
- Latest grant
- 21 Apr 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1989 | 2 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 0 | 0 |
| 1994 | 1 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 5 | 0 |
| 1998 | 1 | 0 |
| 1999 | 3 | 0 |
| 2000 | 2 | 0 |
| 2001 | 1 | 1 |
| 2002 | 3 | 2 |
| 2003 | 2 | 3 |
| 2004 | 1 | 1 |
| 2005 | 4 | 11 |
| 2006 | 6 | 9 |
| 2007 | 6 | 5 |
| 2008 | 9 | 4 |
| 2009 | 2 | 2 |
| 2010 | 2 | 2 |
| 2011 | 2 | 3 |
| 2012 | 2 | 4 |
| 2013 | 2 | 1 |
| 2014 | 2 | 3 |
| 2015 | 5 | 3 |
| 2016 | 5 | 2 |
| 2017 | 5 | 5 |
| 2018 | 2 | 1 |
| 2019 | 2 | 0 |
| 2020 | 5 | 6 |
| 2021 | 3 | 2 |
| 2022 | 4 | 7 |
| 2023 | 4 | 5 |
| 2024 | 5 | 3 |
| 2025 | 3 | 0 |
| 2026 | 2 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Non-volatile memory with intelligent erase testing to avoid neighbor plane disturb21 Apr 2026US 12,609,172 B2SanDisk Technologies LLC
- Memory device wear leveling24 Feb 2026US 12,562,233 B2Micron Technology, Inc.
- Method of determining and preprogramming over-erases groups of memory cells30 Dec 2025US 12,512,170 B2Samsung Electronics Co., Ltd.
- Memory system with verify operations of odd and even word lines28 Jan 2025US 12,211,567 B2Kioxia Corporation
- Semiconductor device and erasing method14 Jan 2025US 12,198,768 B2Winbond Electronics Corp.
- Accelerating program-erase cycles on memory devices24 Sep 2026US 2026/0288604 A1Micron Technology, Inc.
- Memory device and method for operating thereof18 Jun 2026US 2026/0171159 A1SK hynix Inc.
- Flash memory apparatus and erasing method thereof4 Jun 2026US 2026/0155185 A1Winbond Electronics Corp.
- Non-volatile memory with intelligent erase testing to avoid neighbor plane disturb19 Sep 2024US 2024/0312538 A1Western Digital Technologies, Inc.
- Nonvolatile memory device and method of controlling the same29 Aug 2024US 2024/0290401 A1Samsung Electronics Co., Ltd.
Most cited
By later US patents
- Nonvolatile semiconductor memory device with soft-programming to adjust erased state of memory cells178US 6,134,140 AKabushiki Kaisha Toshiba · 2000
- Systems for soft programming non-volatile memory utilizing individual verification and additional soft programming of subsets of memory cells95US 7,408,804 B2SanDisk Corporation · 2008
- Nonvolatile semiconductor memory device73US 6,549,464 B2Kabushiki Kaisha Toshiba · 2003
- Low voltage one transistor flash EEPROM cell using Fowler-Nordheim programming and erase59US 5,689,459 ARohm Co., Ltd. · 1997
- Nonvolatile semiconductor memory device58US 6,798,698 B2Kabushiki Kaisha Toshiba · 2004