G11C 11/4125
Cells incorporating circuit means for protecting against loss of information
Official title: {Cells incorporating circuit means for protecting against loss of information}
G11C11/4125 (Cells incorporating circuit means for protecting against loss of information) appears on 493 US grants and 372 published applications in this corpus.
Search patents in G11C- Granted patents
- 493
- Published applications
- 372
- Assignees
- 186
- Inventors
- 739
- Latest grant
- 25 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 1 | 0 |
| 1986 | 4 | 0 |
| 1987 | 1 | 0 |
| 1988 | 2 | 0 |
| 1989 | 10 | 0 |
| 1990 | 4 | 0 |
| 1991 | 3 | 0 |
| 1992 | 5 | 0 |
| 1993 | 1 | 0 |
| 1994 | 8 | 0 |
| 1995 | 7 | 0 |
| 1996 | 9 | 0 |
| 1997 | 4 | 0 |
| 1998 | 9 | 0 |
| 1999 | 8 | 0 |
| 2000 | 6 | 0 |
| 2001 | 17 | 3 |
| 2002 | 4 | 5 |
| 2003 | 12 | 18 |
| 2004 | 17 | 20 |
| 2005 | 16 | 22 |
| 2006 | 25 | 19 |
| 2007 | 23 | 29 |
| 2008 | 22 | 26 |
| 2009 | 24 | 22 |
| 2010 | 19 | 17 |
| 2011 | 21 | 14 |
| 2012 | 12 | 9 |
| 2013 | 13 | 12 |
| 2014 | 20 | 19 |
| 2015 | 16 | 11 |
| 2016 | 21 | 14 |
| 2017 | 21 | 11 |
| 2018 | 15 | 21 |
| 2019 | 24 | 18 |
| 2020 | 19 | 16 |
| 2021 | 12 | 8 |
| 2022 | 9 | 10 |
| 2023 | 10 | 9 |
| 2024 | 6 | 4 |
| 2025 | 6 | 11 |
| 2026 | 4 | 4 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Memory circuit with memory cells having bistable circuit and non-volatile element25 Aug 2026US 12,718,873 B2Japan Science and Technology Agency
- Bleeder and reset for static random access memory19 May 2026US 12,633,340 B1Synopsys, Inc.
- Staggered write control for dual-interlocked cells28 Apr 2026US 12,614,581 B2Micron Technology, Inc.
- SRAM with PUF dedicated sector standing-by7 Apr 2026US 12,597,464 B2Commissariat A L' Energie Atomique Et Aux Energies Alternatives
- Radiation induced error detection in solid-state devices4 Nov 2025US 12,461,813 B2The Boeing Company
- Quick-set component for static random access memory1 Oct 2026US 2026/0301804 A1International Business Machines Corporation
- Storage device6 Aug 2026US 2026/0229286 A1Sony Semiconductor Solutions Corporation
- Radiation hardened memory cell19 Mar 2026US 2026/0082924 A1Microsemi SoC Corporation
- Memory architecture with a digital in-memory computation processing mode and a column multiplexing memory access mode29 Jan 2026US 2026/0031139 A1STMicroelectronics International N. V.
- Memory Cell Noise Protection via Bidirectional Threshold Switching Devices11 Dec 2025US 2025/0378874 A1Synopsys, Inc.
Most cited
By later US patents
- DRAM circuit with separate refresh memory464US 6,563,754 B1Integrated Device Technology, Inc. · 2003
- Techniques for mitigating, detecting and correcting single event upset effects in systems using SRAM-based field programmable gate arrays127US 7,036,059 B1Xilinx, Inc. · 2006
- Highly scalable dynamic RAM cell with self-signal amplification126US 4,612,629 A1986
- Radiation hardened six transistor random access memory and memory device106US 6,111,780 ALockheed Martin Corporation · 2000
- Semiconductor integrated circuit device and process for manufacturing the same106US 6,809,399 B2Hitachi ULSI Systems Co., Ltd. · 2004