G11C 11/36
Using diodes
Official title: using diodes, e.g. as threshold elements {, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)}
G11C11/36 (Using diodes) appears on 117 US grants and 87 published applications in this corpus.
Search patents in G11C- Granted patents
- 117
- Published applications
- 87
- Assignees
- 63
- Inventors
- 196
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 2 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 0 | 0 |
| 1981 | 0 | 0 |
| 1982 | 0 | 0 |
| 1983 | 2 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 1 | 0 |
| 1989 | 2 | 0 |
| 1990 | 1 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 2 | 0 |
| 1996 | 2 | 0 |
| 1997 | 4 | 0 |
| 1998 | 3 | 0 |
| 1999 | 3 | 0 |
| 2000 | 0 | 0 |
| 2001 | 4 | 0 |
| 2002 | 5 | 2 |
| 2003 | 4 | 12 |
| 2004 | 5 | 1 |
| 2005 | 1 | 1 |
| 2006 | 2 | 3 |
| 2007 | 3 | 6 |
| 2008 | 2 | 9 |
| 2009 | 4 | 5 |
| 2010 | 7 | 3 |
| 2011 | 8 | 4 |
| 2012 | 5 | 7 |
| 2013 | 7 | 4 |
| 2014 | 4 | 3 |
| 2015 | 3 | 2 |
| 2016 | 4 | 2 |
| 2017 | 2 | 3 |
| 2018 | 1 | 1 |
| 2019 | 4 | 5 |
| 2020 | 3 | 2 |
| 2021 | 1 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 8 |
| 2024 | 1 | 2 |
| 2025 | 5 | 1 |
| 2026 | 4 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Method for forming memory device11 Aug 2026US 12,707,625 B2National Taiwan University
- Semiconductor device and electronic device2 Jun 2026US 12,648,148 B2Semiconductor Energy Laboratory Co.Ltd.
- Stateful logic-in-memory using silicon diodes24 Mar 2026US 12,586,625 B2Korea University Research and Business Foundation
- Integrated circuit device and method for fabricating the same24 Mar 2026US 12,588,214 B2National Taiwan Normal University
- Method for operating a dynamic memory structure having a write gating device, a read gating device, and a capacitor9 Sep 2025US 12,412,612 B1Huazhong University of Science and Technology
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Programmable device, programmable device array, operation methods therefor, and memory27 Mar 2025US 2025/0107076 A1CXMT Corporation
- Stateful logic-in-memory using silicon diodes17 Oct 2024US 2024/0347093 A1Korea University Research and Business Foundation
- Method fop forming memory device3 Oct 2024US 2024/0334672 A1National Taiwan University
- Integrated circuit device and method for fabricating the same28 Dec 2023US 2023/0422515 A1National Taiwan Normal University
Most cited
By later US patents
- Switching element with memory provided with Schottky tunnelling barrier239US 5,512,773 AU. S. Philips Corporation · 1996
- Semiconductor device including a tunnel effect element199US 5,936,265 AKabushiki Kaisha Toshiba · 1999
- Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array188US 6,462,984 B1Intel Corporation · 2002
- Structure capable of forming a diode and associated conductive path114US 3,990,098 AE. I. Du Pont de Nemours and Company · 1976
- Resonance tunnel diode memory94US 5,390,145 AFujitsu Limited · 1995