G11C 11/38
Using tunnel diodes
Official title: using tunnel diodes
G11C11/38 (Using tunnel diodes) appears on 33 US grants and 18 published applications in this corpus.
Search patents in G11C- Granted patents
- 33
- Published applications
- 18
- Assignees
- 24
- Inventors
- 63
- Latest grant
- 11 Aug 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1983 | 1 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 1 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 0 | 0 |
| 1991 | 0 | 0 |
| 1992 | 1 | 0 |
| 1993 | 0 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 2 | 0 |
| 1997 | 2 | 0 |
| 1998 | 2 | 0 |
| 1999 | 2 | 0 |
| 2000 | 0 | 0 |
| 2001 | 3 | 0 |
| 2002 | 2 | 0 |
| 2003 | 1 | 2 |
| 2004 | 1 | 0 |
| 2005 | 0 | 0 |
| 2006 | 0 | 1 |
| 2007 | 0 | 0 |
| 2008 | 0 | 1 |
| 2009 | 2 | 1 |
| 2010 | 0 | 0 |
| 2011 | 1 | 0 |
| 2012 | 0 | 0 |
| 2013 | 0 | 0 |
| 2014 | 0 | 0 |
| 2015 | 1 | 1 |
| 2016 | 0 | 0 |
| 2017 | 1 | 3 |
| 2018 | 1 | 1 |
| 2019 | 2 | 2 |
| 2020 | 0 | 0 |
| 2021 | 0 | 0 |
| 2022 | 0 | 0 |
| 2023 | 1 | 4 |
| 2024 | 0 | 1 |
| 2025 | 1 | 0 |
| 2026 | 3 | 1 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for forming memory device11 Aug 2026US 12,707,625 B2National Taiwan University
- Semiconductor device and electronic device2 Jun 2026US 12,648,148 B2Semiconductor Energy Laboratory Co.Ltd.
- Integrated circuit device and method for fabricating the same24 Mar 2026US 12,588,214 B2National Taiwan Normal University
- Semiconductor device with first and second elements and electronic device26 Aug 2025US 12,400,693 B2Semiconductor Energy Laboratory Co.Ltd.
- Metal-insulator-semiconductor tunnel diode memory26 Dec 2023US 11,855,099 B2National Taiwan University
- Method for forming memory device8 Oct 2026US 2026/0313870 A1National Taiwan University
- Method fop forming memory device3 Oct 2024US 2024/0334672 A1National Taiwan University
- Integrated circuit device and method for fabricating the same28 Dec 2023US 2023/0422515 A1National Taiwan Normal University
- Semiconductor device and electronic device7 Dec 2023US 2023/0397427 A1Semiconductor Energy Laboratory Co.Ltd.
- Semiconductor device and electronic device12 Oct 2023US 2023/0326503 A1Semiconductor Energy Laboratory Co.Ltd.
Most cited
By later US patents
- Switching element with memory provided with Schottky tunnelling barrier239US 5,512,773 AU. S. Philips Corporation · 1996
- Semiconductor device including a tunnel effect element199US 5,936,265 AKabushiki Kaisha Toshiba · 1999
- Resonance tunnel diode memory94US 5,390,145 AFujitsu Limited · 1995
- Semiconductor memory device having negative resistance element operated stably with single low power source71US 5,689,458 AMitsubishi Denki Kabushiki Kaisha · 1997
- Spin orbit torque magnetoresistive random access memory containing composite spin hall effect layer including beta phase tungsten62US 10,229,723 B1SanDisk Technologies LLC · 2019