Semiconductor device with first and second elements and electronic device

A semiconductor device comprising:

• a first circuit, a second circuit, and a third circuit,
• wherein the first circuit and the second circuit are arranged in a same row direction,
• wherein the first circuit comprises a first transistor and a first ferroelectric capacitor,
• wherein the second circuit comprises a second transistor and a second ferroelectric capacitor,
• wherein the third circuit comprises a switch, an operational amplifier, and a load,
• wherein a gate of the first transistor and a gate of the second transistor are electrically connected to each other,
• wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the first ferroelectric capacitor,
• wherein one of a source and a drain of the second transistor is electrically connected to a first terminal of the second ferroelectric capacitor,
• wherein a first terminal of the switch is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor,
• wherein a second terminal of the switch is electrically connected to an inverting input terminal of the operational amplifier and a first terminal of the load,
• wherein an output terminal of the operational amplifier is electrically connected to a second terminal of the load,
• wherein the load comprises at least one of a resistor, a capacitor, and a transistor,
• wherein the first ferroelectric capacitor and the second ferroelectric capacitor each comprise a dielectric, and
• wherein the dielectric comprises an oxide containing one or both of hafnium and zirconium.

A semiconductor device comprising:

• a first circuit, a second circuit, and a third circuit,
• wherein the first circuit and the second circuit are arranged in a same row direction,
• wherein the first circuit comprises a first transistor and a first circuit element,
• wherein the second circuit comprises a second transistor and a second circuit element,
• wherein the third circuit comprises a switch, an operational amplifier, and a load,
• wherein a gate of the first transistor and a gate of the second transistor are electrically connected to each other,
• wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the first circuit element,
• wherein one of a source and a drain of the second transistor is electrically connected to a first terminal of the second circuit element,
• wherein a first terminal of the switch is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor,
• wherein a second terminal of the switch is electrically connected to an inverting input terminal of the operational amplifier and a first terminal of the load,
• wherein an output terminal of the operational amplifier is electrically connected to a second terminal of the load,
• wherein the load comprises at least one of a resistor, a capacitor, and a transistor, and
• wherein the first circuit element and the second circuit element each comprise any one of a variable resistor, a magnetic tunnel junction element, and a phase change memory element.