Semiconductor device and electronic device

A semiconductor device comprising:

• a first transistor and a first FTJ element,
• wherein the first FTJ element comprises an input terminal, a tunnel insulating film, a dielectric, and an output terminal,
• wherein in the first FTJ element, the input terminal, the tunnel insulating film, the dielectric, and the output terminal are stacked in this order, and
• wherein one of a source and a drain of the first transistor is electrically connected to the output terminal of the first FTJ element.

A semiconductor device comprising:

• a first circuit, a second circuit, and a third circuit,
• wherein the first circuit comprises a first transistor and a first ferroelectric capacitor,
• wherein the second circuit comprises a second transistor and a second ferroelectric capacitor,
• wherein the third circuit comprises a switch, an operational amplifier, and a load,
• wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the first ferroelectric capacitor,
• wherein one of a source and a drain of the second transistor is electrically connected to a first terminal of the second ferroelectric capacitor,
• wherein a first terminal of the switch is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor,
• wherein a second terminal of the switch is electrically connected to an inverting input terminal of the operational amplifier and a first terminal of the load,
• wherein an output terminal of the operational amplifier is electrically connected to a second terminal of the load,
• wherein the load comprises at least one of a resistor, a capacitor, and a transistor,
• wherein the first ferroelectric capacitor and the second ferroelectric capacitor each comprise a dielectric, and
• wherein the dielectric comprises an oxide containing one or both of hafnium and zirconium.

A semiconductor device comprising:

• a first circuit, a second circuit, and a third circuit,
• wherein the first circuit comprises a first transistor and a first circuit element,
• wherein the second circuit comprises a second transistor and a second circuit element,
• wherein the third circuit comprises a switch, an operational amplifier, and a load,
• wherein one of a source and a drain of the first transistor is electrically connected to a first terminal of the first circuit element,
• wherein one of a source and a drain of the second transistor is electrically connected to a first terminal of the second circuit element,
• wherein a first terminal of the switch is electrically connected to the other of the source and the drain of the first transistor and the other of the source and the drain of the second transistor,
• wherein a second terminal of the switch is electrically connected to an inverting input terminal of the operational amplifier and a first terminal of the load,
• wherein an output terminal of the operational amplifier is electrically connected to a second terminal of the load,
• wherein the load comprises at least one of a resistor, a capacitor, and a transistor, and
• wherein the first circuit element and the second circuit element each comprise any one of a variable resistor, an MTJ element, and a phase change memory element.