G03F 1/34
Phase-edge psm
Official title: Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
G03F1/34 (Phase-edge psm) appears on 239 US grants and 195 published applications in this corpus.
Search patents in G03F- Granted patents
- 239
- Published applications
- 195
- Assignees
- 104
- Inventors
- 418
- Latest grant
- 28 Jun 2022
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 8 | 0 |
| 1995 | 7 | 0 |
| 1996 | 11 | 0 |
| 1997 | 13 | 0 |
| 1998 | 9 | 0 |
| 1999 | 5 | 0 |
| 2000 | 0 | 0 |
| 2001 | 10 | 5 |
| 2002 | 15 | 19 |
| 2003 | 20 | 18 |
| 2004 | 13 | 30 |
| 2005 | 12 | 21 |
| 2006 | 17 | 20 |
| 2007 | 10 | 15 |
| 2008 | 15 | 17 |
| 2009 | 17 | 9 |
| 2010 | 16 | 11 |
| 2011 | 14 | 6 |
| 2012 | 5 | 2 |
| 2013 | 6 | 8 |
| 2014 | 2 | 0 |
| 2015 | 1 | 2 |
| 2016 | 2 | 1 |
| 2017 | 0 | 0 |
| 2018 | 0 | 4 |
| 2019 | 3 | 1 |
| 2020 | 1 | 2 |
| 2021 | 2 | 1 |
| 2022 | 2 | 2 |
| 2023 | 0 | 0 |
| 2024 | 0 | 1 |
By publication year. Applications have been published since 2001.
Recent patents
- Phase-shift mask for extreme ultraviolet lithography28 Jun 2022US 11,372,323 B2Samsung Electronics Co., Ltd.
- Mask blank, phase shift mask, and method of manufacturing semiconductor device26 Apr 2022US 11,314,161 B2Hoya Corporation
- Chromeless phase shift mask structure and process1 Jun 2021US 11,022,874 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Mask blank, phase shift mask, and method of manufacturing semiconductor device1 Jun 2021US 11,022,875 B2Hoya Corporation
- Phase-shift mask for extreme ultraviolet lithography21 Jul 2020US 10,719,008 B2Samsung Electronics Co., Ltd.
- Mask blank, phase shift mask, and method for producing semiconductor device10 Oct 2024US 2024/0337919 A1Hoya Corporation
- Mask blank, transfer mask, and semiconductor-device manufacturing method10 Feb 2022US 2022/0043335 A1Hoya Corporation
- Mask blank, transfer mask, and semiconductor-device manufacturing method3 Feb 2022US 2022/0035235 A1Hoya Corporation
- Mask blank, phase shift mask, and method of manufacturing semiconductor device18 Feb 2021US 2021/0048740 A1Hoya Corporation
- Mask blank, phase shift mask, and method for manufacturing semiconductor device31 Dec 2020US 2020/0409252 A1Hoya Corporation
Most cited
By later US patents
- Sputter deposition of hydrogenated amorphous carbon film and applications thereof199US 5,830,332 AInternational Business Machines Corporation · 1998
- Lithographic method using double exposure techniques, mask position shifting and light phase shifting168US 5,308,741 AMotorola, Inc. · 1994
- Method and system for providing a structure in a microelectronic device using a chromeless alternating phase shift mask148US 7,846,643 B1Western Digital (Fremont), LLC · 2010
- System and method for printing semiconductor patterns using an optimized illumination and reticle108US 6,563,566 B2International Business Machines Corporation · 2003
- Method of optical lithography using phase shift masking104US 5,766,806 AAdvanced Micro Devices, Inc. · 1998