Phase-shift mask for extreme ultraviolet lithography
AssigneeSamsung Electronics Co., Ltd.
InventorsHwanseok Seo, SeongSue Kim, Taehoon Lee, Roman Chalykh
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Abstract
A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
Claims19
A phase-shift mask for extreme ultraviolet (EUV) lithography, comprising:
- a substrate;
- a reflection layer on the substrate;
- and
- phase-shift patterns on the reflection layer, each of the phase-shift patterns consisting of metal nitrides in a single layer, the metal nitrides including two different ones of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN, wherein
- the phase-shift mask is a reflection-type mask.
A phase-shift mask for extreme ultraviolet (EUV) lithography, comprising:
- a substrate;
- a reflection layer on the substrate;
- and
- phase-shift patterns on the reflection layer, each of the phase-shift patterns including a single layer of metal nitrides, the metal nitrides including two different ones of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN, wherein
- the phase-shift mask is a reflection-type mask, and
- each of the phase-shift patterns consist of the single layer of the metal nitrides.
A phase-shift mask for extreme ultraviolet (EUV) lithography, comprising:
- a substrate;
- a reflection layer on the substrate;
- and
- phase-shift patterns consisting of two different metal nitrides in a same layer on the reflection layer, the two different metal nitrides are formed of two different ones of TaN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN, wherein
- the phase-shift mask is a reflection-type mask.
Dependencies are inferred from the claim text.