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US 2022/0043335 A1Published application
Mask blank, transfer mask, and semiconductor-device manufacturing method
AssigneeHoya Corporation
InventorsRyo OHKUBO, Hitoshi MAEDA, Keishi AKIYAMA, Osamu NOZAWA
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Abstract
Provided is a mask blank including an etching stopper. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, in which the thin film is formed of a material containing silicon, the etching stopper film is formed of a material containing hafnium, aluminum, and oxygen, and an oxygen deficiency ratio of the etching stopper film is 6.4% or less.
Claims21
A mask blank comprising:
- a transparent substrate;
- an etching stopper film provided on the transparent substrate and containing hafnium, aluminum, and oxygen;
- and
- a thin film for pattern formation provided on the etching stopper film and containing silicon,
- wherein an oxygen deficiency ratio of the etching stopper film is 6.4% or less.
2 more elements
A transfer mask comprising:
- a transparent substrate;
- an etching stopper film provided on the transparent substrate and containing hafnium, aluminum, and oxygen;
- and
- a thin film having a transfer pattern, provided on the etching stopper film, and containing silicon,
- wherein an oxygen deficiency ratio of the etching stopper film is 6.4% or less.
2 more elements
Dependencies are inferred from the claim text.