Phase-shift mask for extreme ultraviolet lithography

A phase-shift mask for extreme ultraviolet (EUV) lithography, comprising:

• a substrate;
• a reflection layer on the substrate, the reflection layer including the reflection layer including a plurality of first layers and a plurality of second layers alternately stacked on top of each other, and a refractive index of the plurality of first layers is greater than a refractive index of the plurality of second layers;
• phase-shift patterns including one or more first phase-shift patterns and one or more second phase-shift patterns on the reflection layer,
• the one or more first phase-shift patterns being laterally spaced apart from the one or more second phase-shift patterns, a width of the second phase-shift patterns being wider than a width of the first phase-shift patterns;
• and
• light-blocking patterns on the second phase-shift patterns, wherein the light-blocking patterns are not on the first phase-shift patterns,
• wherein the phase-shift patterns consist of metal nitride patterns and the metal nitride patterns are formed of two different metal nitrides, and the two different metal nitrides are formed of two different ones of TiN, HfN, VN, WN, AlN, GaN, ScN, or YN,
• wherein a thickness of the light-blocking patterns is, less than a thickness of the phase-shift patterns,
• wherein the phase-shift mask is a reflection-type mask, and
• wherein a width of the light-blocking patterns is the same as the width of the second phase-shift patterns.

A phase-shift mask, comprising:

• a substrate;
• a reflection layer on the substrate, the reflection layer including a plurality of first layers and a plurality of second layers alternately stacked on top of each other, and a refractive index of the plurality of first layers is greater than a refractive index of the plurality of second layers;
• phase-shift patterns including one or more first phase-shift patterns and one or more second phase-shift patterns on the reflection layer,
• the one or more first phase-shift patterns being laterally spaced apart from the one or more second phase-shift patterns, a width of the second phase-shift patterns being wider than a width of the first phase-shift patterns;
• and
• light-blocking patterns on the second phase-shift patterns, wherein,
• an extinction coefficient of the light-blocking patterns is higher than the extinction coefficient of the phase-shift patterns,
• the light-blocking patterns are not on the first phase-shift patterns,
• the phase-shift patterns consist of at least one metal nitride,
• the at least one metal nitride includes a first metal nitride and a second metal nitride,
• the first metal nitride being formed of HfN, WN, VN, or GaN, and
• the second metal nitride being formed of ZrN, MoN, NbN, or YN;
• and
• a thickness of the light-blocking patterns is less than a thickness of the phase-shift patterns, and a width of the light-blocking patterns is the same as the width of the second phase-shift patterns.