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US 2022/0035235 A1Published application
Mask blank, transfer mask, and semiconductor-device manufacturing method
AssigneeHoya Corporation
InventorsRyo OHKUBO, Hitoshi MAEDA, Keishi AKIYAMA, Osamu NOZAWA
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Abstract
Provided is a mask blank including an etching stopper film. The mask blank has a structure where an etching stopper film and a thin film for pattern formation are stacked in this order on a transparent substrate, featured in that the thin film includes a material containing silicon, the etching stopper film includes a material containing hafnium, aluminum, and oxygen, and a ratio by atom % of an amount of hafnium to a total amount of hafnium and aluminum in the etching stopper film is 0.86 or less.
Claims21
A mask blank comprising:
- a transparent substrate;
- an etching stopper film provided on the transparent substrate and containing hafnium, aluminum, and oxygen;
- and
- a thin film for pattern formation provided on the etching stopper film and containing silicon,
- wherein a ratio by atom % of an amount of the hafnium in the etching stopper film to a total amount of the hafnium and the aluminum in the etching stopper film is 0.86 or less.
2 more elements
A transfer mask comprising:
- a transparent substrate;
- an etching stopper film provided on the transparent substrate and containing hafnium, aluminum, and oxygen;
- and
- a thin film having a transfer pattern, provided on the etching stopper film, and containing silicon,
- wherein a ratio by atom % of an amount of the hafnium in the etching stopper film to a total amount of the hafnium and the aluminum in the etching stopper film is 0.86 or less.
2 more elements
Dependencies are inferred from the claim text.