Mask blank, phase shift mask, and method of manufacturing semiconductor device

A mask blank, comprising:

• a transparent substrate,
• an etching stopper film provided on the transparent substrate, and
• a phase shift film provided on the etching stopper film and containing silicon and oxygen,
• wherein a refractive index n1 of the phase shift film for light of 193 nm wavelength is 1.5 or more, and
• wherein an extinction coefficient k1 of the phase shift film for light of 193 nm wavelength is 0.1 or less, and
• wherein a refractive index n2 of the etching stopper film for light of 193 nm wavelength is 2.5 or more and 3.1 or less, and
• wherein an extinction coefficient k2 of the etching stopper film for light of 193 nm wavelength film is 0.4 or less, and
• wherein the refractive index n2 and the extinction coefficient k2 of the etching stopper film satisfy at least one of (Condition 1) to (Condition 8):
• [k2≤(1.333×n2)−3.564] AND [k2≤(−0.200×n2)+0.998];
• (Condition 1)
• [k2≤(1.212×n2)−3.073] AND [k2≤(−0.174×n2)+0.841];
• (Condition 2)
• [k2≤(1.143×n2)−2.783] AND [k2≤(−0.194×n2)+0.839];
• (Condition 3)
• [k2≤(1.070×n2)−2.520] AND [k2≤(−0.182×n2)+0.755];
• (Condition 4)
• [k2≤(0.978×n2)−2.220] AND [k2≤(−0.154×n2)+0.640];
• (Condition 5)
• [k2≤(0.899×n2)−1.964] AND [k2≤(−0.138×n2)+0.569];
• (Condition 6)
• [k2≤(1.133×n2)−2.462] AND [k2≤(−0.186×n2)+0.657];
• (Condition 7)
• [k2≤(−0.201×n2)+0.665]. (Condition 8)

A phase shift mask, comprising:

• a transparent substrate,
• an etching stopper film provided on the transparent substrate, and
• a phase shift film that is provided on the etching stopper film, contains silicon and oxygen, and has a phase shift pattern,
• wherein a refractive index n1 of the phase shift film for light of 193 nm wavelength is 1.5 or more, and
• wherein an extinction coefficient k1 of the phase shift film for light of 193 nm wavelength is 0.1 or less, and
• wherein a refractive index n2 of the etching stopper film for light of 193 nm wavelength is 2.5 or more and 3.1 or less, and
• wherein an extinction coefficient k2 of the etching stopper film for light of 193 nm wavelength film is 0.4 or less, and
• wherein the refractive index n2 and the extinction coefficient k2 of the etching stopper film satisfy at least one of (Condition 1) to (Condition 5):
• [k2≤(1.333×n2)−3.564] AND [k2≤(−0.200×n2)+0.998];
• (Condition 1)
• [k2≤(1.212×n2)−3.073] AND [k2≤(−0.174×n2)+0.841];
• (Condition 2)
• [k2≤(1.143×n2)−2.783] AND [k2≤(−0.194×n2)+0.839];
• (Condition 3)
• [k2≤(1.070×n2)−2.520] AND [k2≤(−0.182×n2)+0.755];
• (Condition 4)
• [k2≤(0.978×n2)−2.220] AND [k2≤(−0.154×n2)+0.640]. (Condition 5)

A phase shift mask, comprising:

• a transparent substrate,
• an etching stopper film provided on the transparent substrate, and
• a phase shift film that is provided on the etching stopper film, contains silicon and oxygen, and has a phase shift pattern,
• wherein a refractive index n1 of the phase shift film for light of 193 nm wavelength is 1.5 or more, and
• wherein an extinction coefficient k1 of the phase shift film for light of 193 nm wavelength is 0.1 or less, and
• wherein a refractive index n2 of the etching stopper film for light of 193 nm wavelength is 2.5 or more and 3.1 or less, and
• wherein an extinction coefficient k2 of the etching stopper film for light of 193 nm wavelength film is 0.4 or less, and
• wherein the refractive index n2 and the extinction coefficient k2 of the etching stopper film satisfy at least one of (Condition 1) to (Condition 8):
• [k2≤(1.333×n2)−3.564] AND [k2≤(−0.200×n2)+0.998];
• (Condition 1)
• [k2≤(1.212×n2)−3.073] AND [k2≤(−0.174×n2)+0.841];
• (Condition 2)
• [k2≤(1.143×n2)−2.783] AND [k2≤(−0.194×n2)+0.839];
• (Condition 3)
• [k2≤(1.070×n2)−2.520] AND [k2≤(−0.182×n2)+0.755];
• (Condition 4)
• [k2≤(0.978×n2)−2.220] AND [k2≤(−0.154×n2)+0.640];
• (Condition 5)
• [k2≤(0.899×n2)−1.964] AND [k2≤(−0.138×n2)+0.569];
• (Condition 6)
• [k2≤(1.133×n2)−2.462] AND [k2≤(−0.186×n2)+0.657];
• (Condition 7)
• [k2≤(−0.201×n2)+0.665]. (Condition 8)