G01R 31/2639
For testing field-effect devices
Official title: {for testing field-effect devices, e.g. of MOS-capacitors (G01R31/2621 takes precedence)}
G01R31/2639 (For testing field-effect devices) appears on 48 US grants and 51 published applications in this corpus.
Search patents in G01R- Granted patents
- 48
- Published applications
- 51
- Assignees
- 39
- Inventors
- 120
- Latest grant
- 14 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1982 | 2 | 0 |
| 1983 | 0 | 0 |
| 1984 | 0 | 0 |
| 1985 | 0 | 0 |
| 1986 | 0 | 0 |
| 1987 | 0 | 0 |
| 1988 | 0 | 0 |
| 1989 | 1 | 0 |
| 1990 | 1 | 0 |
| 1991 | 0 | 0 |
| 1992 | 0 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 0 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 2 | 2 |
| 2003 | 0 | 0 |
| 2004 | 2 | 2 |
| 2005 | 0 | 0 |
| 2006 | 2 | 2 |
| 2007 | 2 | 1 |
| 2008 | 0 | 0 |
| 2009 | 2 | 1 |
| 2010 | 0 | 1 |
| 2011 | 1 | 1 |
| 2012 | 0 | 1 |
| 2013 | 0 | 1 |
| 2014 | 1 | 1 |
| 2015 | 2 | 3 |
| 2016 | 1 | 3 |
| 2017 | 3 | 6 |
| 2018 | 6 | 2 |
| 2019 | 1 | 3 |
| 2020 | 3 | 0 |
| 2021 | 0 | 3 |
| 2022 | 4 | 5 |
| 2023 | 3 | 3 |
| 2024 | 3 | 6 |
| 2025 | 3 | 4 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Method for obtaining the dielectric constant of a dielectric sheet14 Jul 2026US 12,681,064 B2Msscorps Co., Ltd.
- Method for obtaining the equivalent oxide thickness of a dielectric layer26 May 2026US 12,638,472 B2Msscorps Co., Ltd.
- Flexible wide bandgap double pulse testing methodology16 Dec 2025US 12,498,410 B2Tektronix, Inc.
- Reverse recovery measurements and plots1 Jul 2025US 12,345,755 B2Tektronix, Inc.
- System and method of measuring capacitance of device-under-test18 Feb 2025US 12,228,598 B2Taiwan Semiconductor Manufacturing Company.Ltd
- Integrated circuit20 Nov 2025US 2025/0355038 A1Fuji Electric Co., Ltd.
- Method for obtaining the dielectric constant of a dielectric sheet6 Nov 2025US 2025/0341555 A1Msscorps Co., Ltd.
- System and method of measuring capacitance of device-under-test8 May 2025US 2025/0147086 A1Taiwan Semiconductor Manufacturing Company.Ltd
- Power device characterization on the wafer using automated parametric system8 May 2025US 2025/0147095 A1Keithley Instruments, LLC
- Method for characterizing in pulse mode a iii-v semiconductor transistor and associated test bed12 Dec 2024US 2024/0410931 A1AMCAD Engineering
Most cited
By later US patents
- Apparatus for and method of measuring capacitance with high accuracy111US 6,683,462 B2Agilent Technologies, Inc. · 2004
- Method and apparatus for measuring the capacitance of complementary field-effect transistor devices34US 4,795,964 ATexas Instruments Incorporated · 1989
- Chip capacitance measurement circuit26US 6,404,222 B1Faraday Technology Corp. · 2002
- Method of manufacturing semiconductor devices involving the detection of impurities18US 4,978,915 AAT&T Bell Laboratories · 1990
- Method and apparatus for electrically testing radiation susceptibility of MOS gate devices16US 4,323,842 AThe United States of America as represented by the Secretary of the Army · 1982