Method and apparatus for electrically testing radiation susceptibility of MOS gate devices
AssigneeThe United States of America as represented by the Secretary of the Army
InventorsJames M. McGarrity, Harold E. Boesch, Jr.
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Abstract
A method and apparatus are disclosed for testing susceptibility of a gate insulator in MOS and MIS devices to irradiation without use of ionizing radiation. The method consists of simulating the effects of radiation by applying a high magnitude, pulsed electric field to the device under test. An apparatus capable of determining the relationship between voltage applied to the device under test and the device capacitance is used to provide the desired susceptibility information.
Claims8
A method for electrically testing radiation susceptibility of an MOS gate device which comprises a silicon substrate, an insulating silicon dioxide layer and a metal gate comprising the steps of:
- injecting a controlled number of electrons into said insulating silicon dioxide layer from said silicon substrate;
- and
- measuring a shift in a capacitance-voltage characteristic of said device.
An apparatus for electrically testing radiation susceptibility of MOS gate devices which comprise a silicon substrate, an insulating silicon dioxide layer and a metal gate comprising:
- means for injecting a controlled number of electrons into said insulating silicon dioxide layer from said silicon substrate;
- and
- means for measuring a shift in a capacitance-voltage characteristic of said device.
Dependencies are inferred from the claim text.