Method for obtaining the dielectric constant of a dielectric sheet

A method for obtaining the dielectric constant of a dielectric sheet comprising:

• connecting a semiconductor capacitor and a first parallel plate capacitor in series, wherein a first dielectric sheet of the first parallel plate capacitor has a known first equivalent physical thickness d1 and a known first dielectric constant ε1 and the semiconductor capacitor has a depletion region;
• by a scanning capacitance microscopy, applying a modulation voltage to the semiconductor capacitor and the first parallel plate capacitor to periodically change a width of the depletion region and measuring a first scanning capacitance microscopy signal corresponding to the semiconductor capacitor and the first parallel plate capacitor;
• replacing the first parallel plate capacitor with a second parallel plate capacitor and connecting the semiconductor capacitor and the second parallel plate capacitor in series, wherein a second dielectric sheet of the second parallel plate capacitor has a known second equivalent physical thickness d2 and a known second dielectric constant ε2;
• by the scanning capacitance microscopy, applying the modulation voltage to the semiconductor capacitor and the second parallel plate capacitor to periodically change a width of the depletion region and measuring a second scanning capacitance microscopy signal corresponding to the semiconductor capacitor and the second parallel plate capacitor;
• calculating an impedance ratio based on the first scanning capacitance microscopy signal, the second scanning capacitance microscopy signal, and (d2/d1)×(ε1/ε2);
• replacing the second parallel plate capacitor with a third parallel plate capacitor and connecting the semiconductor capacitor and the third parallel plate capacitor in series, wherein a third dielectric sheet of the third parallel plate capacitor has a known third equivalent physical thickness d3 and the first dielectric sheet, the second dielectric sheet, and the third dielectric sheet have the same areas;
• by the scanning capacitance microscopy, applying the modulation voltage to the semiconductor capacitor and the third parallel plate capacitor to periodically change a width of the depletion region and measuring a third scanning capacitance microscopy signal corresponding to the semiconductor capacitor and the third parallel plate capacitor;
• and
• obtaining a third dielectric constant of the third dielectric sheet of the third parallel plate capacitor based on the first scanning capacitance microscopy signal, the third scanning capacitance microscopy signal, the third equivalent physical thickness, and the impedance ratio.