C30B 29/48
Aiibvi compounds wherein a is zn, cd or hg, and b is
Official title: AIIBVI compounds {wherein A is Zn, Cd or Hg, and B is S, Se or Te}
C30B29/48 (Aiibvi compounds wherein a is zn, cd or hg, and b is) appears on 473 US grants and 300 published applications in this corpus.
Search patents in C30B- Granted patents
- 473
- Published applications
- 300
- Assignees
- 237
- Inventors
- 830
- Latest grant
- 21 Jul 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 6 | 0 |
| 1977 | 1 | 0 |
| 1978 | 7 | 0 |
| 1979 | 2 | 0 |
| 1980 | 0 | 0 |
| 1981 | 4 | 0 |
| 1982 | 5 | 0 |
| 1983 | 7 | 0 |
| 1984 | 12 | 0 |
| 1985 | 9 | 0 |
| 1986 | 14 | 0 |
| 1987 | 11 | 0 |
| 1988 | 11 | 0 |
| 1989 | 13 | 0 |
| 1990 | 17 | 0 |
| 1991 | 12 | 0 |
| 1992 | 11 | 0 |
| 1993 | 7 | 0 |
| 1994 | 10 | 0 |
| 1995 | 14 | 0 |
| 1996 | 9 | 0 |
| 1997 | 5 | 0 |
| 1998 | 9 | 0 |
| 1999 | 12 | 0 |
| 2000 | 8 | 0 |
| 2001 | 7 | 6 |
| 2002 | 7 | 3 |
| 2003 | 8 | 15 |
| 2004 | 2 | 10 |
| 2005 | 8 | 20 |
| 2006 | 16 | 12 |
| 2007 | 12 | 14 |
| 2008 | 5 | 21 |
| 2009 | 11 | 16 |
| 2010 | 17 | 16 |
| 2011 | 15 | 20 |
| 2012 | 8 | 15 |
| 2013 | 11 | 16 |
| 2014 | 15 | 13 |
| 2015 | 7 | 13 |
| 2016 | 12 | 13 |
| 2017 | 17 | 15 |
| 2018 | 12 | 10 |
| 2019 | 8 | 5 |
| 2020 | 9 | 8 |
| 2021 | 10 | 4 |
| 2022 | 13 | 9 |
| 2023 | 13 | 16 |
| 2024 | 8 | 5 |
| 2025 | 2 | 2 |
| 2026 | 4 | 3 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same21 Jul 2026US 12,686,943 B2SiCrystal GmbH
- Method for producing semiconductor quantum dots30 Jun 2026US 12,668,740 B2The Trustees of Princeton University
- Nanostructures, production method thereof, electronic device including the same19 May 2026US 12,635,315 B2Samsung Electronics Co., Ltd.
- Multi-level injector with angled gas outlet for semiconductor epitaxy growth10 Mar 2026US 12,571,101 B2APPLIED Materials.Inc.
- Method for uniform growth of bi-layer transition metal dichalcogenide continuous films12 Aug 2025US 12,385,140 B2Nanjing University
- Method for producing semiconductor quantum dots17 Sep 2026US 2026/0275188 A1The Trustees of Princeton University
- Metal halide perovskite-chalcogenide epitaxial heterostructure nanocrystal and method of preparing same17 Sep 2026US 2026/0275571 A1The Industry & Academic Cooperation in Chungnam National University (IAC)
- Hydrogen sensor material8 Jan 2026US 2026/0009156 A1Christian-Albrechts-Universitaet zu Kiel
- Apparatus and Method for Growth of Two-Dimensional Crystal Material16 Oct 2025US 2025/0320629 A1Wuhan University
- Crystal growth methods and devices19 Jun 2025US 2025/0198047 A1Meishan Boya Advanced Materials Co., Ltd.
Most cited
By later US patents
- Method for performing growth of compound thin films750US 4,413,022 ACanon Kabushiki Kaisha · 1983
- Method for chemical vapor deposition of semiconductor films by separate feeding of source gases and growing of films431US 5,728,425 AFujitsu Limited · 1998
- Preparation of nanocrystallites375US 6,576,291 B2Massachusetts Institute of Technology · 2003
- Method of making mosaic array of thin semiconductor material of large substrates171US 6,562,127 B1The United States of America as represented by the Secretary of the Navy · 2003
- Highly luminescent color selective nanocrystalline materials171US 6,861,155 B2Massachusetts Institute of Technology · 2005