Metal halide perovskite-chalcogenide epitaxial heterostructure nanocrystal and method of preparing same
AssigneeThe Industry & Academic Cooperation in Chungnam National University (IAC)
InventorsJihoon CHOI, Artavazd Kirakosyan
Life of this patent
Estimating the term…
Abstract
Proposed are a metal halide perovskite (MHP)-chalcogenide epitaxial heterostructure nanocrystal (NC) characterized by including a first domain of an MHP satisfying CsPbX3 (where X is a halide) and a second domain of a PbTe chalcogenide, the second domain grown on one surface of the first domain, wherein the first and second domains form an epitaxial junction while achieving lattice matching, and a method of preparing the same.
Claims14
A metal halide perovskite (MHP)-chalcogenide epitaxial heterostructure nanocrystal (NC) comprising:
- a first domain of an MHP satisfying CsPbX3 (where X is a halide);
- and
- a second domain of a PbTe chalcogenide, the second domain grown on one surface of the first domain,
- wherein the first and second domains form an epitaxial junction while achieving lattice matching.
A method of preparing an MHP-chalcogenide epitaxial heterostructure NC, the method comprising:
- a) preparing a first domain precursor of an MHP satisfying CsPbX3 (where X is a halide) and a second domain precursor of a PbTe chalcogenide, respectively;
- and
- b) growing a second domain on one surface of a first domain by reacting the first domain precursor with the second domain precursor,
- wherein the first and second domains form an epitaxial junction while achieving lattice matching.
Dependencies are inferred from the claim text.