Crystal structure orientation in semiconductor semi-finished products and semiconductor substrates for fissure reduction and method of setting same

A monocrystalline semiconductor semi-finished product or monocrystalline semiconductor substrate of improved mechanical robustness against cleavage, the semiconductor semi-finished product or substrate having a central axis and a at least partially curved lateral surface parallel to said central axis, further comprising:

• first and second front faces, wherein
• the first front face is perpendicular to the central axis, and
• said central axis is an axis of symmetry of a cylindrical surface defined by a curved part of said at least partially curved lateral surface,
• characterized in that
• a crystal structure of the monocrystalline semiconductor is a diamond structure, said crystal structure being oriented relative to the central axis and the at least partially curved lateral surface of the semiconductor semi-finished product or substrate with a predetermined orientation at which:
• a first crystallographic axis, which is a crystallographic axis perpendicular to a set of first cleavage planes of the {111} family, makes a first tilt angle with a plane transverse to the central axis;
• a second crystallographic axis, which is a crystallographic axis perpendicular to a set of second cleavage planes and to the first crystallographic axis, makes a second tilt angle with said plane transverse to the central axis so that each set of parallel cleavage planes that are symmetrically equivalent to either the first cleavage planes or to the second cleavage planes are inclined relative to the central axis by respective tilt angles;
• and
• a reference lattice plane of the crystal structure, which is a plane of the {110} family that makes an angle of 90° with the first cleavages planes, is inclined with respect to the first front face by the first tilt angle in the direction of the first crystallographic axis and by the second tilt angle in the direction of the second crystallographic axis;
• wherein the first crystallographic axis is the [111] axis or any of the crystallographic axes symmetrically equivalent to the [111] axis in the diamond structure,
• wherein the first tilt angle and the second tilt angle are selected such that each set of first cleavage planes and each set of second cleavage planes of said crystal structure intersects the at least partially curved lateral surface along a line segment, which is parallel to the central axis, with at least a predetermined minimum number of parallel cleavage planes per unit length of the line segment, respectively, irrespective to a position of the line segment around an outer perimeter of the semiconductor semi-finished product or substrate, and
• wherein said predetermined minimum number of parallel cleavage planes per unit length is at least 1000 planes per millimeter.