Method for uniform growth of bi-layer transition metal dichalcogenide continuous films
AssigneeNanjing University
InventorsXinran Wang, Lei Liu, Taotao Li, Yi Shi
Life of this patent
Estimating the term…
Loading patent…
AssigneeNanjing University
InventorsXinran Wang, Lei Liu, Taotao Li, Yi Shi
Estimating the term…
A large-area, uniform, and continuous films of bi-layer transition metal dichalcogenide (TMDC) and preparation method comprises that the bi-layer TMDC continuous films are grown on a substrate through the merging of bi-layer domains; the top and bottom layers of the bi-layer domains have equal size and grow synchronously, which guarantees uniformity of the bi-layer films; the bi-layer domains were nucleated at the surface steps of the substrate which require a height no less than 0.8 nm; the bi-layer TMDCs films include molybdenum disulfide, tungsten disulfide, molybdenum diselenide, and tungsten diselenide, and the size of the bi-layer TMDC films reaches centimeter-level and above, limited only by the substrate size.
A bi-layer transition metal dichalcogenide (TMDC) continuous film comprising a substrate and a bi-layered crystal grain comprising top and bottom layers of domains synchronously nucleated on a surface of the substrate;
Dependencies are inferred from the claim text.