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US 2025/0198047 A1Published application
Crystal growth methods and devices
AssigneeMeishan Boya Advanced Materials Co., Ltd.
InventorsYu WANG, Weiming GUAN
Life of this patent
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Abstract
Embodiments of the present disclosure provide crystal growth methods and devices. The crystal growth methods include placing a feedstock in a material zone of a growth chamber and placing a seed crystal in a growth zone of the growth chamber. The material zone and the growth zone are separated by a partition, and the partition includes at least one outlet. The crystal growth methods further include growing a crystal based on the seed crystal and the feedstock by a physical vapor transport (PVT) manner.
Claims20
A crystal growth method, comprising:
- placing a feedstock in a material zone of a growth chamber;
- placing a seed crystal in a growth zone of the growth chamber, wherein the material zone and the growth zone are separated by a partition, and the partition includes at least one outlet;
- and
- growing a crystal based on the seed crystal and the feedstock by a physical vapor transport (PVT) manner, wherein a temperature in a vicinity of the partition is higher than a temperature of the material zone or a temperature of the growth zone.
1 more element
A crystal growth device, comprising:
- a growth chamber, including a material zone and a growth zone, wherein
- the material zone is configured to place a feedstock,
- the growth zone is configured to place a seed crystal, and
- the material zone and the growth zone are separated by a partition, and the partition includes at least one outlet;
- and
- a heating assembly configured to heat the growth chamber for growing a crystal based on the seed crystal and the feedstock by a physical vapor transport (PVT) manner.
3 more elements
Dependencies are inferred from the claim text.