Nanostructures, production method thereof, electronic device including the same

A method of manufacturing nanostructures, which comprises:

• preparing an organic solution comprising a zinc precursor in an organic solvent;
• optionally heating the organic solution;
• adding a first semiconductor nanocrystal comprising zinc and, selenium, and tellurium, and
• a chalcogen precursor
• to the organic solution and conducting a reaction between
• the zinc precursor and
• the chalcogen precursor to form a second semiconductor nanocrystal comprising a zinc chalcogenide on the first semiconductor nanocrystal to manufacture the nanostructures,
• wherein the method comprises adding a first compound represented by Chemical Formula 1 to a reaction system for forming the second semiconductor nanocrystal before a luminescent peak wavelength of light emitted from particles in the reaction system reaches about 480 nanometers:
• R2NH2 Chemical Formula 1
• wherein R2 is a substituted or unsubstituted C5-40 hydrocarbon group,
• wherein the nanostructures comprise tellurium in the first semiconductor nanocrystal,
• wherein in the nanostructures, a mole ratio of selenium to tellurium is greater than or equal to about 0.83:1 and less than or equal to about 10:1, and
• wherein a derivative thermogravimetry curve of the nanostructures has an extreme value in a temperature range of greater than or equal to about 250° C. and less than or equal to about 420° C.