C30B 29/38
Nitrides
C30B29/38 (Nitrides) appears on 299 US grants and 308 published applications in this corpus.
Search patents in C30B- Granted patents
- 299
- Published applications
- 308
- Assignees
- 192
- Inventors
- 685
- Latest grant
- 8 Sep 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1977 | 1 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 1 | 0 |
| 1981 | 1 | 0 |
| 1982 | 4 | 0 |
| 1983 | 2 | 0 |
| 1984 | 1 | 0 |
| 1985 | 4 | 0 |
| 1986 | 3 | 0 |
| 1987 | 1 | 0 |
| 1988 | 3 | 0 |
| 1989 | 4 | 0 |
| 1990 | 6 | 0 |
| 1991 | 2 | 0 |
| 1992 | 4 | 0 |
| 1993 | 3 | 0 |
| 1994 | 2 | 0 |
| 1995 | 9 | 0 |
| 1996 | 4 | 0 |
| 1997 | 3 | 0 |
| 1998 | 9 | 0 |
| 1999 | 6 | 0 |
| 2000 | 9 | 0 |
| 2001 | 2 | 3 |
| 2002 | 6 | 3 |
| 2003 | 8 | 5 |
| 2004 | 5 | 8 |
| 2005 | 7 | 9 |
| 2006 | 5 | 11 |
| 2007 | 5 | 6 |
| 2008 | 9 | 5 |
| 2009 | 1 | 3 |
| 2010 | 8 | 6 |
| 2011 | 1 | 8 |
| 2012 | 3 | 4 |
| 2013 | 6 | 5 |
| 2014 | 4 | 7 |
| 2015 | 5 | 15 |
| 2016 | 4 | 13 |
| 2017 | 11 | 20 |
| 2018 | 12 | 19 |
| 2019 | 15 | 21 |
| 2020 | 14 | 23 |
| 2021 | 20 | 24 |
| 2022 | 14 | 13 |
| 2023 | 14 | 14 |
| 2024 | 13 | 32 |
| 2025 | 17 | 24 |
| 2026 | 7 | 7 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Group III nitride crystal manufacturing apparatus having a growth chamber that includes a multilayer body or a porous body made of at least one element having a catalytic effect for a decomposition reaction of a nitrogen element-containing gas8 Sep 2026US 12,729,457 B2Panasonic Holdings Corporation
- Group-III element nitride semiconductor substrate25 Aug 2026US 12,721,056 B2NGK Insulators, Ltd.
- Nitride laminate and manufacturing method of the same18 Aug 2026US 12,713,843 B2Nitto Denko Corporation
- Film formation apparatus and film formation method of gallium nitride film16 Jun 2026US 12,655,514 B2Japan Display Inc.
- Epitaxial wafer16 Jun 2026US 12,655,537 B2Shin-Etsu Handotai Co., Ltd.
- High quality group-iii metal nitride crystals, methods of making, and methods of use20 Aug 2026US 2026/0247878 A1KYOCERA Corporation
- Method for manufacturing semiconductor device13 Aug 2026US 2026/0239774 A1KYOCERA Corporation
- Composite substrate and device6 Aug 2026US 2026/0226657 A1NGK Insulators, Ltd.
- Gan crystal and method for producing gan crystal18 Jun 2026US 2026/0168134 A1Mitsubishi Chemical Corporation
- Process for Depositing Scandium Nitride by Atomic Layer Deposition Techniques30 Apr 2026US 2026/0117416 A1Kurt J. Lesker Company
Most cited
By later US patents
- Apparatus and method for growth of a thin film940US 6,511,539 B1ASM America, Inc. · 2003
- Production of elemental thin films using a boron-containing reducing agent809US 6,475,276 B1ASM Microchemistry Oy · 2002
- Production of elemental films using a boron-containing reducing agent448US 7,144,809 B2ASM International N.V. · 2006
- Apparatus and method for growth of a thin film348US 7,141,499 B2ASM America, Inc. · 2006
- Production of elemental thin films using a boron-containing reducing agent346US 6,821,889 B2ASM International N.V. · 2004