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US 2026/0117416 A1Published application
Process for Depositing Scandium Nitride by Atomic Layer Deposition Techniques
AssigneeKurt J. Lesker Company
InventorsGilbert Bruce Rayner, JR., Noel Christopher O'Toole
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Abstract
A method of forming a film on a surface of a substrate in an internal volume of a reactor is provided. The method includes: dosing the surface of the substrate with a scandium precursor; purging the scandium precursor from the internal volume of the reactor, dosing the surface of the substrate with a co-reactant; and purging the co-reactant from the internal volume of the reactor.
Claims22
A method of forming a film on a surface of a substrate in an internal volume of a reactor, comprising:
- dosing the surface of the substrate with a scandium precursor;
- purging the scandium precursor from the internal volume of the reactor;
- dosing the surface of the substrate with a co-reactant;
- and
- purging the co-reactant from the internal volume of the reactor.
2 more elements
An apparatus for atomic scale processing, comprising:
- a reactor having inner and outer surfaces, wherein at least a portion of the inner surfaces define an internal volume of the reactor;
- a fixture assembly positioned within the internal volume of the reactor having a surface configured to hold a coated substrate within the internal volume of the reactor;
- a scandium precursor dosage source comprising a scandium precursor;
- and
- a co-reactant dosage source comprising a co-reactant.
2 more elements
Dependencies are inferred from the claim text.