Group III nitride crystal manufacturing apparatus having a growth chamber that includes a multilayer body or a porous body made of at least one element having a catalytic effect for a decomposition reaction of a nitrogen element-containing gas

A group III nitride crystal manufacturing apparatus comprising:

• a raw material chamber generating a group III elemental oxide gas;
• and
• a growth chamber allowing the group III element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate,
• wherein the growth chamber comprises:
• a seed substrate for growing the group III nitride crystal,
• an exhaust port for exhausting unreacted group III oxide gas and the nitrogen element-containing gas, and
• a decomposition promoting layer disposed in a region between the seed substrate and the exhaust port such that the unreacted group III oxide gas and the nitrogen element-containing gas pass through the decomposition promoting layer before exiting the growth chamber via the exhaust port, the decomposition promoting layer being adapted to provide a catalytic effect for a decomposition reaction of the nitrogen element-containing gas in the region between the seed substrate and the exhaust port.

A group III nitride crystal manufacturing apparatus comprising:

• a raw material chamber generating a group III elemental oxide gas;
• and
• a growth chamber allowing the group III element oxide gas supplied from the raw material chamber to react with a nitrogen element-containing gas to generate a group III nitride crystal on a seed substrate,
• wherein the growth chamber comprises:
• a seed substrate for growing the group III nitride crystal,
• an exhaust port for exhausting unreacted group III oxide gas and the nitrogen element-containing gas, and
• a decomposition promoting layer having a catalytic effect for a decomposition reaction of the nitrogen element-containing gas,
• wherein the decomposition promoting layer is disposed between the seed substrate and the exhaust port and extends from a wall of the growth chamber such that all of the unreacted group III oxide gas and the nitrogen element-containing gas flowing downstream of the seed substrate passes through the decomposition promoting layer before exiting the growth chamber via the exhaust port.