C30B 27/00
Single-crystal growth under a protective fluid
C30B27/00 (Single-crystal growth under a protective fluid) appears on 81 US grants and 58 published applications in this corpus.
Search patents in C30B- Granted patents
- 81
- Published applications
- 58
- Assignees
- 47
- Inventors
- 195
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 1 | 0 |
| 1979 | 0 | 0 |
| 1980 | 4 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 2 | 0 |
| 1984 | 4 | 0 |
| 1985 | 4 | 0 |
| 1986 | 2 | 0 |
| 1987 | 5 | 0 |
| 1988 | 4 | 0 |
| 1989 | 1 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 2 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 1 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 1 |
| 2002 | 1 | 0 |
| 2003 | 0 | 2 |
| 2004 | 0 | 0 |
| 2005 | 1 | 3 |
| 2006 | 1 | 1 |
| 2007 | 1 | 0 |
| 2008 | 1 | 1 |
| 2009 | 0 | 1 |
| 2010 | 0 | 1 |
| 2011 | 0 | 1 |
| 2012 | 0 | 3 |
| 2013 | 2 | 2 |
| 2014 | 2 | 1 |
| 2015 | 1 | 0 |
| 2016 | 1 | 2 |
| 2017 | 1 | 1 |
| 2018 | 2 | 3 |
| 2019 | 1 | 3 |
| 2020 | 2 | 5 |
| 2021 | 2 | 5 |
| 2022 | 4 | 1 |
| 2023 | 4 | 7 |
| 2024 | 5 | 7 |
| 2025 | 4 | 5 |
| 2026 | 2 | 2 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Subgroups
Granted patents
Recent patents
- Large-scale compound semiconductor single crystal growth system and method9 Jun 2026US 12,649,979 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion14 Apr 2026US 12,601,086 B2The 13th Research Institute of China Electronics Technology Group Corporation
- GaAs wafer and method of producing GaAs ingot11 Nov 2025US 12,467,160 B2Dowa Electronics Materials Co., Ltd.
- Method and system for liquid encapsulated growth of cadmium zinc telluride crystals24 Jun 2025US 12,338,549 B1DRS Network & Imaging Systems, LLC
- Low etch pit density gallium arsenide crystals with boron dopant15 Apr 2025US 12,276,044 B2AXT, Inc.
- Low Etch Pit Density Gallium Arsenide Crystals With Boron Dopant28 May 2026US 2026/0146367 A1AXT, Inc.
- Pvt method and apparatus for producing single crystals in a safe process26 Mar 2026US 2026/0085443 A1PVA TePla AG
- Crystal growth device and method with temperature gradient control4 Dec 2025US 2025/0369148 A1
- Device and method for centrifugally synthesizing and growing compound crystal4 Dec 2025US 2025/0369149 A1
- Method for growing gallium oxide single crystal and apparatus for growing single crystal8 May 2025US 2025/0146169 A1Korea Institute of Ceramic Engineering and Technology
Most cited
By later US patents
- Protein crystallization in microfluidic structures458US 6,409,832 B2Micronics, Inc. · 2002
- Lateral epitaxial growth by seeded solidification77US 4,371,421 AMassachusetts Institute of Technology · 1983
- Lateral epitaxial growth by seeded solidification34US 4,670,088 AMassachusetts Institute of Technology · 1987
- Method of entraining dislocations and other crystalline defects in heated film contacting patterned region32US 4,479,846 AMassachusetts Institute of Technology · 1984
- Method of producing GaAs single crystals doped with boron24US 4,478,675 ASumitomo Electric Industries, Ltd. · 1984