Method for growing gallium oxide single crystal and apparatus for growing single crystal
AssigneeKorea Institute of Ceramic Engineering and Technology
InventorsSi Young BAE, Seong Min JEONG, Yun Ji SHIN, Tae Hun Gu, A Ran SHIN
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Abstract
The present invention relates to a method for growing a gallium oxide single crystal and an apparatus for growing a single crystal, and according to one aspect of the present invention, the method includes providing a gallium oxide raw material in a crucible containing iridium, injecting carbon dioxide so that a preset carbon dioxide partial pressure is formed to suppress the loss of iridium, melting the gallium oxide raw material provided in the crucible, and producing a gallium oxide single crystal from the melt.
Claims20
A method for growing a gallium oxide single crystal, comprising:
- providing a gallium oxide raw material in a crucible containing iridium;
- injecting carbon dioxide so that a preset partial pressure of the carbon dioxide is formed to suppress the loss of the iridium;
- melting the gallium oxide raw material provided in the crucible;
- and
- producing a gallium oxide single crystal from the melt.
An apparatus for growing a single crystal, comprising:
- a crucible
- a heating device that heats the crucible;
- a chamber in which the crucible is accommodated;
- an injection unit that injects carbon dioxide into the chamber;
- and
- a control unit that controls a partial pressure of the injected carbon dioxide.
Dependencies are inferred from the claim text.