C30B 27/02
Single-crystal growth under a protective fluid: by pulling from a melt
Official title: by pulling from a melt
C30B27/02 (Single-crystal growth under a protective fluid: by pulling from a melt) appears on 53 US grants and 33 published applications in this corpus.
Search patents in C30B- Granted patents
- 53
- Published applications
- 33
- Assignees
- 39
- Inventors
- 141
- Latest grant
- 9 Jun 2026
Filings by year
| Year | Granted patents | Published applications |
|---|---|---|
| 1976 | 1 | 0 |
| 1977 | 0 | 0 |
| 1978 | 0 | 0 |
| 1979 | 0 | 0 |
| 1980 | 3 | 0 |
| 1981 | 5 | 0 |
| 1982 | 2 | 0 |
| 1983 | 1 | 0 |
| 1984 | 3 | 0 |
| 1985 | 3 | 0 |
| 1986 | 1 | 0 |
| 1987 | 4 | 0 |
| 1988 | 2 | 0 |
| 1989 | 0 | 0 |
| 1990 | 2 | 0 |
| 1991 | 1 | 0 |
| 1992 | 1 | 0 |
| 1993 | 1 | 0 |
| 1994 | 0 | 0 |
| 1995 | 1 | 0 |
| 1996 | 0 | 0 |
| 1997 | 0 | 0 |
| 1998 | 0 | 0 |
| 1999 | 0 | 0 |
| 2000 | 0 | 0 |
| 2001 | 0 | 0 |
| 2002 | 0 | 0 |
| 2003 | 0 | 0 |
| 2004 | 0 | 0 |
| 2005 | 0 | 2 |
| 2006 | 1 | 0 |
| 2007 | 1 | 0 |
| 2008 | 0 | 1 |
| 2009 | 0 | 0 |
| 2010 | 0 | 1 |
| 2011 | 0 | 0 |
| 2012 | 0 | 3 |
| 2013 | 2 | 1 |
| 2014 | 2 | 0 |
| 2015 | 0 | 0 |
| 2016 | 0 | 2 |
| 2017 | 0 | 1 |
| 2018 | 2 | 2 |
| 2019 | 0 | 1 |
| 2020 | 0 | 3 |
| 2021 | 2 | 2 |
| 2022 | 3 | 1 |
| 2023 | 2 | 3 |
| 2024 | 4 | 6 |
| 2025 | 1 | 4 |
| 2026 | 2 | 0 |
By publication year. Applications have been published since 2001. 2026 runs to 8 Oct.
Recent patents
- Large-scale compound semiconductor single crystal growth system and method9 Jun 2026US 12,649,979 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion14 Apr 2026US 12,601,086 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Method and system for liquid encapsulated growth of cadmium zinc telluride crystals24 Jun 2025US 12,338,549 B1DRS Network & Imaging Systems, LLC
- Methods and devices for growing scintillation crystals with multi-component garnet structure26 Nov 2024US 12,152,315 B2Meishan Boya Advanced Materials Co., Ltd.
- Process for synthesizing indium phosphide by liquid phosphorus injection method15 Oct 2024US 12,116,690 B2The 13th Research Institute of China Electronics Technology Group Corporation
- Device and method for centrifugally synthesizing and growing compound crystal4 Dec 2025US 2025/0369149 A1
- Method for growing gallium oxide single crystal and apparatus for growing single crystal8 May 2025US 2025/0146169 A1Korea Institute of Ceramic Engineering and Technology
- Scintillation crystal and preparation method and preparation device thereof10 Apr 2025US 2025/0116031 A1Meishan Boya Advanced Materials Co., Ltd.
- Methods and devices for growing scintillation crystals with multi-component garnet structure16 Jan 2025US 2025/0019862 A1Meishan Boya Advanced Materials Co., Ltd.
- Apparatus and method for synthesizing and continuously growing phosphide in magnetic field in immersion fashion24 Oct 2024US 2024/0352624 A1The 13th Research Institute of China Electronics Technology Group Corporation
Most cited
By later US patents
- Method of producing GaAs single crystals doped with boron24US 4,478,675 ASumitomo Electric Industries, Ltd. · 1984
- Apparatus for forming semiconductor crystals of essentially uniform diameter22US 3,980,438 AArthur D. Little, Inc. · 1976
- Method of manufacturing gallium phosphide single crystals with low defect density14US 4,303,464 ASumitomo Electric Industries, Ltd. · 1981
- Method and apparatus for manufacturing single crystals14US 4,539,067 ATokyo Shibaura Denki Kabushiki Kaisha · 1985
- Method of synthesizing and growing copper-indium-diselenide (CuInSe.sub.2) crystals13US 4,652,332 AThe United States of America as represented by the United States Department of Energy · 1987