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US 12,152,315 B2Granted
Methods and devices for growing scintillation crystals with multi-component garnet structure
AssigneeMeishan Boya Advanced Materials Co., Ltd.
InventorsYu Wang, Weiming Guan, Min Li
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Abstract
The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.
Claims17
A method for growing a crystal, wherein:
- a formula of the crystal is A3yB5xO12, wherein
- A consists of at least one of lanthanide, at least one of actinide, or at least one of yttrium;
- B consists of at least one of aluminum, gallium, indium or scandium;
- and
- x=0.01%˜50%, y=0.001%˜6%;
- the method comprises:
- weighting reactants based on a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants;
- placing the reactants, on which a second preprocessing operation has been performed, into a temperature field device of a crystal growth device, wherein
- an observation unit is mounted on the temperature field device and the observation unit includes a through hole and an internal chamber which is communicated with the through hole and the temperature field device, and the through hole is configured for gas passing,
- the crystal growth device includes an open hearth and the temperature field device is positioned in the hearth,
- the open hearth has gas exchange with atmospheric environment, and
- the temperature field device is sealed and has no gas exchange with the atmospheric environment;
- introducing a flowing gas into the temperature field device through the through hole after sealing the temperature field device;
- and
- activating the crystal growth device to grow the crystal based on a Czochralski technique.
12 more elements
A method for growing a crystal, comprising:
- weighting reactants based on a molar ratio of the reactants according to a reaction equation (1) after a first preprocessing operation is performed on the reactants,
- 6yCeO2+3(1−y)Gd2O3+5xAl2O3+5(1−x)Ga2O3→2(CeyGd1-y)3(AlxGa1-x)5O12+2↑, (1)
- wherein x=0.01%˜50%, y=0.001%˜6%, and a weight of Ga2O3 exceeds 0.01%˜10% of a weight of Ga2O3 determined according to the reaction equation (1) or a total weight of the reactants determined according to the reaction equation (1);
- placing the reactants, on which a second preprocessing operation has been performed, into a temperature field device of a crystal growth device, wherein
- an observation unit is mounted on the temperature field device and the observation unit includes a through hole and an internal chamber which is communicated with the through hole and the temperature field device, and the through hole is configured for gas passing,
- the crystal growth device includes an open hearth and the temperature field device is positioned in the hearth,
- the open hearth has gas exchange with atmospheric environment, and
- the temperature field device is sealed and has no gas exchange with the atmospheric environment;
- introducing a flowing gas into the temperature field device through the through hole after sealing the temperature field device;
- and
- activating the crystal growth device to grow the crystal based on a Czochralski technique.
8 more elements
Dependencies are inferred from the claim text.